MT18VDDF12872HG-40BD1 Micron Technology Inc, MT18VDDF12872HG-40BD1 Datasheet - Page 12

• Manufacturer Part Number: MT18VDDF12872HG-40BD1
• Description: MODULE DDR SDRAM 1GB 200-SODIMM
• Manufacturer: Micron Technology Inc

Specifications of MT18VDDF12872HG-40BD1

• Memory Type: DDR SDRAM
• Memory Size: 1GB
• Speed: 200MHz
• Package / Case: 200-SODIMM
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Other names: 557-1116

Absolute Maximum Ratings
nent damage to the device. This is a stress rating only,
and functional operation of the device at these or any
other conditions above those indicated in the opera-
Table 10: DC Electrical Characteristics and Operating Conditions
Notes: 1–5, 14; notes appear on pages 16–18; 0°C
Table 11: AC Input Operating Conditions
Notes: 1–5, 12; notes appear on pages 16–18; 0°C
pdf: 09005aef80e4880c, source: 09005aef80e487d7
DDAF18C128x72HG.fm - Rev. A 10/04 EN
PARAMETER/CONDITION
PARAMETER/CONDITION
Supply Voltage
I/O Supply Voltage
I/O Reference Voltage
I/O Termination Voltage (system)
Input High (Logic 1) Voltage
Input Low (Logic 0) Voltage
INPUT LEAKAGE CURRENT Any input
0V
(All other pins not under test = 0V)
OUTPUT LEAKAGE CURRENT
(DQs are disabled; 0V
OUTPUT LEVELS
High Current (V
Low Current (V
Input High (Logic 1) Voltage
Input Low (Logic 0) Voltage
I/O Reference Voltage
Stresses greater than those listed may cause perma-
Voltage on V
Voltage on V
Voltage on V
Relative to V
Relative to VSS . . . . . . . . . . . . . . . . . . . -1V to +3.6V
Relative to V
V
IN
V
DD
, V
OUT
OUT
REF
DD
DD
REF
SS
SS
Q Supply
= V
Supply
= 0.373V, maximum V
and Inputs
pin 0V
. . . . . . . . . . . . . . . . . . . . . -1V to +3.6V
. . . . . . . . . . . . . . . . . . . . -1V to +3.6V
DD
V
Q - 0.373V, minimum V
OUT
V
IN
V
DD
1.35V
Q)
REF
, maximum V
Command/Address,
RAS#, CAS#, WE#
S#, CKE
CK, CK#
DM
DQ, DQS
REF
, minimum V
SYMBOL
V
V
T
T
V
REF
A
A
IH
IL
(AC)
(AC)
(AC)
+70°C
+70°C; V
TT
)
12
TT
)
tional sections of this specification is not implied.
Exposure to absolute maximum rating conditions for
extended periods may affect reliability.
DD
SYMBOL
V
V
Voltage on I/O Pins
Operating Temperature
Storage Temperature (plastic) . . . . . . -55°C to +150°C
Short Circuit Output Current. . . . . . . . . . . . . . . 50mA
= V
V
0.49
V
IH
IH
REF
V
V
V
I
DD
I
I
OH
Relative to V
T
OZ
OL
REF
DD
(DC)
(DC)
I
Micron Technology, Inc., reserves the right to change products or specifications without notice.
TT
DD
I
MIN
A
Q
+ 0.310
–
(ambient) . . . . . . . . . . . . . . . . . . . . . .0°C to +70°C
Q = +2.6V ±0.1V
V
1GB (x72, ECC, DR) PC3200
DD
Q
V
V
REF
REF
0.49
V
-16.8
MIN
16.8
-0.3
2.5
2.5
-36
-18
-12
-10
DD
-4
200-PIN DDR SODIMM
+ 0.15
- 0.04
SS
0.49
V
Q
REF
. . . . . . . . . . . . -0.5V to V
MAX
- 0.310
–
V
V
V
DD
V
REF
REF
DD
0.51
V
Q
MAX
2.7
2.7
DD
36
18
12
10
+ 0.04
4
–
–
- 0.15
+ 0.3
Q
UNITS
V
V
V
UNITS
mA
©2004 Micron Technology, Inc.
mA
µA
µA
V
V
V
V
V
V
NOTES
DD
25, 34
25, 34
31, 35, 47
NOTES
31, 35,
38, 47
32, 33
6
Q +0.5V
6, 38
7, 38
25
25
45
45