MT9VDDF6472G-335D3 Micron Technology Inc, MT9VDDF6472G-335D3 Datasheet - Page 16

• Manufacturer Part Number: MT9VDDF6472G-335D3
• Description: MODULE DDR SDRAM 512MB 184-DIMM
• Manufacturer: Micron Technology Inc

Specifications of MT9VDDF6472G-335D3

• Memory Type: DDR SDRAM
• Memory Size: 512MB
• Speed: 167MHz
• Package / Case: 184-DIMM
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Other names: 557-1131; MT9VDDF6472G-335DF3

Table 13: IDD Specifications and Conditions – 512MB
DDR SDRAM components only
Notes: 1–5, 8, 10, 12, 48; notes appear on pages 20–23; 0°C
pdf: 09005aef80e119b2, source: 09005aef807d56a1
DDF9C32_64x72G.fm - Rev. B 9/04 EN
PARAMETER/CONDITION
OPERATING CURRENT: One device bank; Active-Precharge;
t
changing once per clock cyle; Address and control inputs
changing once every two clock cycles
OPERATING CURRENT: One device bank; Active -Read Precharge;
Burst = 4;
I
cycle
PRECHARGE POWER-DOWN STANDBY CURRENT: All device banks
idle; Power-down mode;
IDLE STANDBY CURRENT: CS# = HIGH; All device banks idle;
t
once per clock cycle. V
ACTIVE POWER-DOWN STANDBY CURRENT: One device bank
active; Power-down mode;
CKE = LOW
ACTIVE STANDBY CURRENT: CS# = HIGH; CKE = HIGH; One device
bank; Active-Precharge;
t
clock cycle; Address and other control inputs changing once per
clock cycle
OPERATING CURRENT: Burst = 2; Reads; Continuous burst; One
bank active; Address and control inputs changing once per clock
cycle;
OPERATING CURRENT: Burst = 2; Writes; Continuous burst; One
device bank active; Address and control inputs changing once
per clock cycle;
changing twice per clock cycle
AUTO REFRESH CURRENT
SELF REFRESH CURRENT: CKE
OPERATING CURRENT: Four device bank interleaving READs (BL =
4) with auto precharge,
t
Active READ, or WRITE commands
OUT
RC =
CK MIN; CKE = HIGH; Address and other control inputs changing
CK =
CK =
= 0mA; Address and control inputs changing once per clock
t
t
t
t
RC (MIN);
CK (MIN); DQ, DM andDQS inputs changing twice per
CK (MIN); Address and control inputs change only during
CK =
t
RC =
t
CK (MIN); I
t
t
CK =
t
RC (MIN);
CK =
t
CK (MIN); DQ, DM, and DQS inputs
t
IN
CK (MIN); DQ, DM and DQS inputs
OUT
t
t
= V
RC =
RC =
t
CK =
t
CK =
t
= 0mA
REF
CK =
t
t
RC (MIN);
RAS (MAX);
t
0.2V
for DQ, DQS, and DM
CK (MIN); CKE = (LOW)
t
CK (MIN);
t
CK (MIN);
t
t
REFC =
REFC = 7.8125µs
t
RFC (MIN)
t
CK =
16
T
A
+70°C; V
I
I
I
SYM
I
I
I
I
DD4W
I
I
DD3N
I
DD5A
I
I
DD2P
DD3P
DD4R
DD2F
DD 0
DD1
DD5
DD6
DD7
256MB, 512MB (x72, ECC, SR)
Micron Technology, Inc., reserves the right to change products or specifications without notice.
184-PIN DDR SDRAM RDIMM
DD
= V
1,170
1,440
1,485
1,575
2,610
3,645
-335
405
315
450
45
90
45
DD
Q = +2.5V ±0.2V
MAX
1,170
1,440
1,485
1,395
2,610
3,600
-262
405
315
450
45
90
45
©2004 Micron Technology, Inc. All rights reserved.
-26A/
-265/
1,035
1,305
1,305
1,215
2,520
3,150
-202
360
270
405
45
90
45
UNITS
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
NOTES
21, 28,
21, 28,
20, 42
20, 42
20, 42
20, 44
24, 44
20, 43
44
45
44
41
20
9