MT9VDDF6472G-335D3 Micron Technology Inc, MT9VDDF6472G-335D3 Datasheet - Page 18

• Manufacturer Part Number: MT9VDDF6472G-335D3
• Description: MODULE DDR SDRAM 512MB 184-DIMM
• Manufacturer: Micron Technology Inc

Specifications of MT9VDDF6472G-335D3

• Memory Type: DDR SDRAM
• Memory Size: 512MB
• Speed: 167MHz
• Package / Case: 184-DIMM
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Other names: 557-1131; MT9VDDF6472G-335DF3

Table 15: DDR SDRAM Component Electrical Characteristics and Recommended AC
Notes: 1–5, 8, 10, 12; notes appear on pages 20–23; 0°C
Table 16: DDR SDRAM Component Electrical Characteristics and Recommended AC
Notes: 1–5, 8, 10, 12; notes appear on pages 20–23; 0°C
pdf: 09005aef80e119b2, source: 09005aef807d56a1
DDF9C32_64x72G.fm - Rev. B 9/04 EN
AC CHARACTERISTICS
PARAMETER
Access window of DQs from CK/CK#
CK high-level width
CK low-level width
Clock cycle time
DQ and DM input hold time relative to DQS
DQ and DM input setup time relative to DQS
DQ and DM input pulse width (for each input)
Access window of DQS from CK/CK#
DQS input high pulse width
DQS input low pulse width
DQS-DQ skew, DQS to last DQ valid, per group, per access
Write command to first DQS latching transition
DQS falling edge to CK rising - setup time
DQS falling edge from CK rising - hold time
Half clock period
Data-out high-impedance window from CK/CK#
Data-out low-impedance window from CK/CK#
Address and control input hold time (fast slew rate)
Address and control input setup time (fast slew rate)
AC CHARACTERISTICS
PARAMETER
DQS read preamble
DQS read postamble
ACTIVE bank a to ACTIVE bank b command
DQS write preamble
DQS write preamble setup time
DQS write postamble
Write recovery time
Internal WRITE to READ command delay
Data valid output window
REFRESH to REFRESH command interval
Average periodic refresh interval
Terminating voltage delay to V
Exit SELF REFRESH to non-READ command
Exit SELF REFRESH to READ command
Operating Conditions (-335, -262) (Continued)
Operating Conditions (-26A, -265, -202)
DD
CL = 2.5
CL = 2
T
T
A
A
18
SYMBOL MIN
+70°C; V
+70°C; V
t
SYMBOL MIN
t
WPRES
t
t
t
t
t
t
t
t
t
WPRE
WPST
t
t
t
XSNR
XSRD
t
t
t
DQSCK
RPRE
RPST
t
REFC
CK (2.5)
t
t
t
WTR
RRD
REFI
VTD
CK (2)
DQSH
DQSQ
DIPW
t
WR
DQSL
DQSS
na
t
t
t
t
DSH
t
t
t
t
t
DSS
t
t
DH
AC
CH
HP
HZ
IH
DS
CL
LZ
IS
F
F
256MB, 512MB (x72, ECC, SR)
DD
DD
Micron Technology, Inc., reserves the right to change products or specifications without notice.
184-PIN DDR SDRAM RDIMM
0.25
200
-0.75
7.5/10
-0.75
-0.75
= V
= V
0.9
0.4
0.4
0.45
0.45
1.75
0.35
0.35
0.75
0.90
0.90
12
15
75
t
7.5
0.5
0.5
0.2
0.2
0
1
0
QH -
-26A/-265
t
DD
DD
CH,
-335
Q = +2.5V ±0.2V
Q = +2.5V ±0.2V
t
DQSQ
MAX
+0.75
+0.75
t
+0.75
MAX
CL
0.55
0.55
1.25
70.3
0.5
0.6
0.6
13
13
1.1
7.8
MIN
0.45
0.45
0.35
0.35
0.75
-0.8
-0.8
-0.8
0.6
0.6
0.2
0.2
1.1
1.1
MIN
10
0.25
200
8
2
0.9
0.4
0.4
t
12
15
75
0
1
QH -
0
t
CH,
©2004 Micron Technology, Inc. All rights reserved.
-202
-262
t
MAX
DQSQ
t
+0.8
0.55
0.55
+0.8
1.25
+0.8
MAX
CL
0.6
70.3
13
13
1.1
0.6
0.6
7.8
UNITS NOTES
UNITS NOTES
t
t
t
t
t
t
t
t
t
t
t
t
t
ns
ns
ns
ns
µs
µs
ns
ns
ns
CK
CK
ns
ns
ns
ns
ns
ns
CK
CK
ns
CK
CK
CK
ns
ns
ns
ns
ns
CK
CK
CK
CK
CK
CK
18, 19
40, 46
40, 46
23, 27
23, 27
22, 23
16, 37
16, 37
38
38
17
22
21
21
26
26
27
30
12
12