MT16LSDT3264AG-133G3 Micron Technology Inc, MT16LSDT3264AG-133G3 Datasheet - Page 14
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MT16LSDT3264AG-133G3
Manufacturer Part Number
MT16LSDT3264AG-133G3
Description
MODULE SDRAM 256MB 168-DIMM
Manufacturer
Micron Technology Inc
Datasheet
1.MT16LSDT3264AG-133G3.pdf
(26 pages)
Specifications of MT16LSDT3264AG-133G3
Memory Type
SDRAM
Memory Size
256MB
Speed
133MHz
Package / Case
168-DIMM
Main Category
DRAM Module
Sub-category
SDRAM
Module Type
168UDIMM
Device Core Size
64b
Organization
32Mx64
Total Density
256MByte
Chip Density
128Mb
Access Time (max)
6/5.4ns
Maximum Clock Rate
133MHz
Operating Supply Voltage (typ)
3.3V
Operating Current
1.216A
Number Of Elements
16
Operating Supply Voltage (max)
3.6V
Operating Supply Voltage (min)
3V
Operating Temp Range
0C to 65C
Operating Temperature Classification
Commercial
Pin Count
168
Mounting
Socket
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
Table 12: I
Notes: 1, 5, 6, 11, 13; notes appear on page 18; V
Table 13: I
Notes: 1, 5, 6, 11, 13; notes appear on page 18; V
a - Value calculated as one module rank in this operating condition, and all otherranks in Power-Down Mode.
b - Value calculated reflects all module ranks in this operating condition.
09005aef80bccbe7
SD8_16C16_32x64AG.fm - Rev. E 12/05 EN
PARAMETER/CONDITION
PARAMETER/CONDITION
OPERATING CURRENT: Active Mode;
Burst = 2; READ or WRITE;
STANDBY CURRENT: Power-Down Mode;
All device device banks idle; CKE = LOW
STANDBY CURRENT: Active Mode;
CKE = HIGH; CS# = HIGH; All device banks active after
No accesses in progress
OPERATING CURRENT: Burst Mode;
Continuous burst; READ or WRITE; All device banks active
AUTO REFRESH CURRENT
CKE = HIGH; CS# = HIGH
SELF REFRESH CURRENT: CKE £ 0.2V
OPERATING CURRENT: Active Mode;
Burst = 2; READ or WRITE;
STANDBY CURRENT: Power-Down Mode;
All device banks idle; CKE = LOW
STANDBY CURRENT: Active Mode;
CKE = HIGH; CS# = HIGH; All device banks active after
No accesses in progress
OPERATING CURRENT: Burst Mode;
Continuous burst; READ or WRITE; All device banks active
AUTO REFRESH CURRENT
CS# = HIGH; CKE = HIGH
SELF REFRESH CURRENT: CKE ≤ 0.2V
DD
DD
Specifications and Conditions – 128MB
Specifications and Conditions – 256MB
t
t
RC =
RC =
t
t
RC (MIN)
RC (MIN)
t
t
t
t
RFC =
RFC = 15.625µs
RFC =
RFC = 15.625µs
DD
DD
, V
, V
t
t
DD
DD
RFC (MIN)
RFC (MIN)
t
t
RCD met;
RCD met;
Q = +3.3V ±0.3V; SDRAM components only
Q = +3.3V ±0.3V; SDRAM components only
14
128MB (x64, SR), 256MB (x64, DR)
SYMBOL
SYMBOL
I
I
I
I
I
I
I
I
I
I
I
I
I
I
DD
DD
DD
DD
DD
DD
DD
DD
DD
DD
DD
DD
DD
DD
Micron Technology, Inc., reserves the right to change products or specifications without notice.
1
2
3
4
5
6
7
1
2
3
4
5
6
7
b
b
b
b
a
a
a
1,280
1,320
2,640
1,296
1,336
5,280
-13E
-13E
168-PIN SDRAM UDIMM
400
416
16
24
16
32
48
32
MAX
1,200
1,280
2,480
MAX
1,216
1,216
4,960
-133
-133
400
416
16
24
16
32
48
32
©2003, 2004 Micron Technology, Inc. All rights reserved.
1,120
1,200
2,160
1,136
1,136
4,320
-10E
-10E
320
336
16
24
16
32
48
32
UNITS
UNITS
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
19, 30, 31
19, 30, 31
3, 18, 19,
3, 12, 19,
3, 18, 19,
3, 12, 18,
3, 18, 19,
3, 12, 19,
3, 18, 19,
3, 12, 18,
NOTES
NOTES
30
30
30
30
30
30
30
30
4
4