MT16LSDT3264AG-133G3 Micron Technology Inc, MT16LSDT3264AG-133G3 Datasheet - Page 20
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MT16LSDT3264AG-133G3
Manufacturer Part Number
MT16LSDT3264AG-133G3
Description
MODULE SDRAM 256MB 168-DIMM
Manufacturer
Micron Technology Inc
Datasheet
1.MT16LSDT3264AG-133G3.pdf
(26 pages)
Specifications of MT16LSDT3264AG-133G3
Memory Type
SDRAM
Memory Size
256MB
Speed
133MHz
Package / Case
168-DIMM
Main Category
DRAM Module
Sub-category
SDRAM
Module Type
168UDIMM
Device Core Size
64b
Organization
32Mx64
Total Density
256MByte
Chip Density
128Mb
Access Time (max)
6/5.4ns
Maximum Clock Rate
133MHz
Operating Supply Voltage (typ)
3.3V
Operating Current
1.216A
Number Of Elements
16
Operating Supply Voltage (max)
3.6V
Operating Supply Voltage (min)
3V
Operating Temp Range
0C to 65C
Operating Temperature Classification
Commercial
Pin Count
168
Mounting
Socket
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
Table 18: EEPROM Device Select Code
Most significant bit (b7) is sent first
Table 19: EEPROM Operating Modes
09005aef80bccbe7
SD8_16C16_32x64AG.fm - Rev. E 12/05 EN
SDA OUT
SELECT CODE
Memory Area Select Code (two arrays)
Protection Register Select Code
Current Address Read
Random Address Read
Sequential Read
Byte Write
Page Write
SDA IN
SCL
MODE
t SU:STA
RW BIT
Figure 10: SPD EEPROM Timing Diagram
1
0
1
1
0
0
t F
t HD:STA
t LOW
t AA
V
V
V
V
IH
IH
IH
IH
WC
V
V
or V
or V
or V
or V
IL
IL
IL
IL
IL
IL
t HIGH
t HD:DAT
BYTES
b7
DEVICE TYPE IDENTIFIER
1
0
≤ 16
20
≥ 1
1
1
1
1
128MB (x64, SR), 256MB (x64, DR)
t DH
b6
0
1
INITIAL SEQUENCE
START, Device Select, RW = “1”
START, Device Select, RW = “0”, Address
reSTART, Device Select, RW = “1”
Similar to Current or Random Address Read
START, Device Select, RW = “0”
START, Device Select, RW = “0”
t R
Micron Technology, Inc., reserves the right to change products or specifications without notice.
t SU:DAT
b5
1
1
168-PIN SDRAM UDIMM
b4
0
0
SA2
SA2
©2003, 2004 Micron Technology, Inc. All rights reserved.
b3
CHIP ENABLE
SA1
SA1
b2
t SU:STO
t BUF
SA0
SA0
b1
UNDEFINED
RW
RW
RW
b0