MT16VDDT6464AG-40BG6 Micron Technology Inc, MT16VDDT6464AG-40BG6 Datasheet - Page 13
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MT16VDDT6464AG-40BG6
Manufacturer Part Number
MT16VDDT6464AG-40BG6
Description
MODULE DDR 512MB 184-DIMM
Manufacturer
Micron Technology Inc
Specifications of MT16VDDT6464AG-40BG6
Memory Type
DDR SDRAM
Memory Size
512MB
Speed
400MT/s
Package / Case
184-DIMM
Main Category
DRAM Module
Sub-category
DDR SDRAM
Module Type
184UDIMM
Device Core Size
64b
Organization
64Mx64
Total Density
512MByte
Chip Density
256Mb
Maximum Clock Rate
400MHz
Operating Supply Voltage (typ)
2.6V
Operating Current
1.632A
Number Of Elements
16
Operating Supply Voltage (max)
2.7V
Operating Supply Voltage (min)
2.5V
Operating Temp Range
0C to 70C
Operating Temperature Classification
Commercial
Pin Count
184
Mounting
Socket
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
Absolute Maximum Ratings
nent damage to the device. This is a stress rating only,
and functional operation of the device at these or any
other conditions above those indicated in the opera-
Table 10: DC Electrical Characteristics and Operating Conditions
Notes: 1–5, 14, 48; notes appear on pages 20–23; 0°C
Table 11: AC Input Operating Conditions
Notes: 1–5, 14, 48, 49; notes appear on pages 20–23; 0°C
pdf: 09005aef80739fa5, source: 09005aef807397e5
DD16C32_64_128_256x64AG.fm - Rev. C 9/04 EN
PARAMETER/CONDITION
Supply Voltage
I/O Supply Voltage
I/O Reference Voltage
I/O Termination Voltage (system)
Input High (Logic 1) Voltage
Input Low (Logic 0) Voltage
INPUT LEAKAGE CURRENT
Any input 0V
1.35V (All other pins not under test = 0V)
OUTPUT LEAKAGE CURRENT
(DQs are disabled; 0V
OUTPUT LEVELS
High Current (V
Low Current (V
PARAMETER/CONDITION
Input High (Logic 1) Voltage
Input Low (Logic 0) Voltage
I/O Reference Voltage
Stresses greater than those listed may cause perma-
Voltage on V
Voltage on V
Voltage on V
Relative to VSS . . . . . . . . . . . . . . . . . . . . -1V to +3.6V
Relative to V
Relative to V
OUT
OUT
VIN
REF
DD
DD
= 0.373V, maximum V
SS
SS
Q Supply
= V
Supply
and Inputs
. . . . . . . . . . . . . . . . . . . . -1V to +3.6V
. . . . . . . . . . . . . . . . . . . . -1V to +3.6V
VDD, VREF pin 0V
DD
VOUT
Q-0.373V, minimum V
VDDQ)
REF
VIN
, maximum V
REF
Command/
Address, RAS#,
CAS#, WE#
CKE, S#
CK0, CK0#
CK1, CK1#
CK2, CK2#
DM
DQ, DQS
, minimum V
SYMBOL
V
V
V
REF
IH
IL
(
(
AC
(
AC
T
AC
TT
A
)
)
)
)
T
A
+70°C
13
256MB, 512MB, 1GB, 2GB (x64, DR)
TT
)
+70°C; V
tional sections of this specification is not implied.
Exposure to absolute maximum rating conditions for
extended periods may affect reliability.
V
SYMBOL
0.49 V
Voltage on I/O Pins
Operating Temperature
Storage Temperature (plastic) . . . . . . -55°C to +150°C
Short Circuit Output Current. . . . . . . . . . . . . . . 50mA
V
V
REF
V
V
V
IH
IL
V
I
DD
I
I
OH
Relative to V
T
OZ
OL
REF
MIN
DD
I
Micron Technology, Inc., reserves the right to change products or specifications without notice.
(
(
TT
I
184-PIN DDR SDRAM UDIMM
DC
DC
+ 0.310
A
DD
–
Q
(ambient) . . . . . . . . . . . . . . . . . . . . .. 0°C to +70°C
)
)
DD
= V
Q
V
0.49 V
V
DD
REF
REF
Q = +2.5V ±0.2V
-16.8
MIN
16.8
-0.3
-32
-16
-12
-10
2.3
2.3
-8
-4
+ 0.15
- 0.04 V
V
0.51 V
SS
REF
DD
MAX
. . . . . . . . . . . . -0.5V to V
Q 0.51 V
- 0.310
–
DD
V
V
REF
REF
DD
Q
MAX
2.7
2.7
32
16
12
10
+ 0.04
8
4
–
–
- 0.15
+ 0.3
DD
UNITS
Q
V
V
V
UNITS
mA
mA
µA
µA
V
V
V
V
V
V
©2004 Micron Technology, Inc.
12, 25, 35
12, 25, 35
NOTES
DD
32, 36, 39
6
NOTES
32, 36
33, 34
Q +0.5V
6, 39
7, 39
25
25
47
47