MT4VDDT3264HG-40BF2 Micron Technology Inc, MT4VDDT3264HG-40BF2 Datasheet - Page 16

• Manufacturer Part Number: MT4VDDT3264HG-40BF2
• Description: MODULE DDR 256MB 200-SODIMM
• Manufacturer: Micron Technology Inc

Specifications of MT4VDDT3264HG-40BF2

• Memory Type: DDR SDRAM
• Memory Size: 256MB
• Speed: 400MT/s
• Package / Case: 200-SODIMM
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant

Table 15: DDR SDRAM Component Electrical Characteristics and Recommended AC
Notes: 1–5, 12-15, 29; notes appear on pages 17–20; 0°C
pdf: 09005aef80b56d1b, source: 09005aef8086ea0b
DDA4C16_32x64HG.fm - Rev. D 9/04 EN
AC CHARACTERISTICS
PARAMETER
ACTIVE to ACTIVE/AUTO REFRESH command period
AUTO REFRESH command period
ACTIVE to READ or WRITE delay
PRECHARGE command period
DQS read preamble
DQS read postamble
ACTIVE bank a to ACTIVE bank b command
DQS write preamble
DQS write preamble setup time
DQS write postamble
Write recovery time
Internal WRITE to READ command delay
Data valid output window
REFRESH to REFRESH command interval
Average periodic refresh interval
Terminating voltage delay to V
Exit SELF REFRESH to non-READ command
Exit SELF REFRESH to READ command
Operating Conditions (Continued)
DD
T
A
16
+70°C; V
128MB, 256MB (x64, SR) PC3200
200-PIN DDR SDRAM SODIMM
SYMBOL
Micron Technology, Inc., reserves the right to change products or specifications without notice.
DD
t
t
WPRES
t
t
t
t
t
t
t
WPRE
t
t
WPST
t
t
XSNR
XSRD
t
RPRE
t
REFC
RPST
WTR
RCD
RRD
REFI
VTD
t
RFC
t
WR
na
RC
RP
= V
DD
Q = +2.6V ±0.1V
MIN
0.25
200
0.9
0.4
0.4
55
70
15
15
10
15
70
t
0
2
0
QH -
-40B
t
DQSQ
MAX
70.3
1.1
0.6
0.6
7.8
UNITS
t
t
t
t
t
t
ns
ns
ns
ns
ns
ns
ns
ns
µs
µs
ns
ns
CK
CK
CK
CK
CK
CK
©2004 Micron Technology, Inc.
NOTES
18, 19
44
39
39
17
22
21
21