MT4VDDT3264HG-40BF2 Micron Technology Inc, MT4VDDT3264HG-40BF2 Datasheet - Page 20

• Manufacturer Part Number: MT4VDDT3264HG-40BF2
• Description: MODULE DDR 256MB 200-SODIMM
• Manufacturer: Micron Technology Inc

Specifications of MT4VDDT3264HG-40BF2

• Memory Type: DDR SDRAM
• Memory Size: 256MB
• Speed: 400MT/s
• Package / Case: 200-SODIMM
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant

pdf: 09005aef80b56d1b, source: 09005aef8086ea0b
DDA4C16_32x64HG.fm - Rev. D 9/04 EN
41. The current Micron part operates below the slow-
42. Random addressing changing and 50 percent of
43. Random addressing changing and 100 percent of
44. CKE must be active (high) during the entire time a
45. I
est JEDEC operating frequency of 83 MHz. As
such, future die may not reflect this option.
data changing at every transfer.
data changing at every transfer.
refresh command is executed. That is, from the
time the AUTO REFRESH command is registered,
CKE must be active at each rising clock edge, until
t
driven to a valid high or low logic level. I
similar to I
address and control inputs to remain stable.
REF later.
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2N specifies the DQ, DQS, and DM to be
DD
2
F
except I
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2
Q
specifies the
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2
Q
is
20
46. Whenever the operating frequency is altered, not
47. Leakage number reflects the worst case leakage
48. When an input signal is HIGH or LOW, it is
49. This is the DC voltage supplied at the DRAM and
128MB, 256MB (x64, SR) PC3200
200-PIN DDR SDRAM SODIMM
Although I
I
including jitter, the DLL is required to be reset.
This is followed by 200 clock cycles (before READ
commands).
possible through the module pin, not what each
memory device contributes.
defined as a steady state logic high or logic low.
is inclusive of all noise up to 20MHz. Any noise
above 20MHz at the DRAM generated from any
source other than that of the DRAM itself may not
exceed the DC voltage range of 2.6V ±100mV.
DD
Micron Technology, Inc., reserves the right to change products or specifications without notice.
2
F
is “worst case.”
DD
2
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, I
DD
2
N
, and I
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©2004 Micron Technology, Inc.
2
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are similar,