MT9VDDF6472G-40BF1 Micron Technology Inc, MT9VDDF6472G-40BF1 Datasheet - Page 27

• Manufacturer Part Number: MT9VDDF6472G-40BF1
• Description: MODULE DDR SDRAM 512MB 184-DIMM
• Manufacturer: Micron Technology Inc

Specifications of MT9VDDF6472G-40BF1

• Memory Type: DDR SDRAM
• Memory Size: 512MB
• Speed: 400MT/s
• Package / Case: 184-DIMM
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Other names: MT9VDDF6472G-40BF3; MT9VDDF6472G-40BF3

Table 22: Serial Presence-Detect Matrix
“1”/“0”: Serial Data, “driven to HIGH”/“driven to LOW”
pdf: 09005aef80f6ab6a, source: 09005aef80f6ab23
DDAF9C32_64x72G.fm - Rev. C 9/04 EN
BYTE
36-40 Reserved
10
11
12
13
14
15
16
17
18
19
20
21
22
23
24
25
26
27
28
29
30
31
32
33
34
35
41
42
43
44
45
0
1
2
3
4
5
6
7
8
9
Number of SPD Bytes Used by Micron
Total Number of Bytes in SPD Device
Fundamental Memory Type
Number of Row Addresses on Assembly
Number of Column Addresses on Assembly
Number of Physical Ranks on DIMM
Module Data Width
Module Data Width (Continued)
Module Voltage Interface Levels
SDRAM Cycle Time, (
SDRAM Access From Clock,(
Module Configuration Type
Refresh Rate/Type
SDRAM Device Width (Primary SDRAM)
Error-checking SDRAM Data Width
Minimum Clock Delay, Back-to-Back Random
Column Access
Burst Lengths Supported
Number of Banks on SDRAM Device
CAS Latencies Supported
CS Latency
WE Latency
SDRAM Module Attributes
SDRAM Device Attributes: General
SDRAM Cycle Time, (
SDRAM Access from CK , (
SDRAM Cycle Time, (
SDRAM Access from CK , (
Minimum Row Precharge Time, (
Minimum Row Active to Row Active, (
Minimum RAS# to CAS# Delay, (
Minimum RAS# Pulse Width, (
Module Rank Density
Address and Command Setup Time, (
Address and Command Hold Time, (
Data/ Data Mask Input Setup Time, (
Data/ Data Mask Input Hold Time, (
Min Active Auto Refresh Time (
Minimum Auto Refresh to Active/
Auto Refresh Command Period, (
SDRAM Device Max Cycle Time (
SDRAM Device Max DQS-DQ Skew Time (
SDRAM Device Max Read Data Hold Skew Factor
(
t
QHS)
DESCRIPTION
t
t
t
CK) (CAS Latency = 3)
CK), CAS Latency = 2.5
CK), CAS Latency = 2
t
t
AC), CAS Latency = 2.5
AC), CAS Latency = 2
t
AC) (CAS Latency = 3)
t
RAS)
t
t
RC)
t
RCD)
t
CK
t
RP)
RFC)
t
MAX
t
DH)
t
IH)
t
DS)
IS)
t
RRD)
)
t
DQSQ)
256MB, 512MB (x72, ECC, SR) PC3200
27
Registered, PLL/Diff. Clock
0.7ns (for PC2700 compat.)
6ns (for PC2700 compat.)
0.75ns (PC2100, PC1600)
7.5ns (PC2100, PC1600)
Fast / Concurrent AP
ENTRY (VERSION)
256MB or 512MB
SDRAM DDR
0.6ns (-40B)
0.6ns (-40B)
0.4ns (-40B)
0.4ns (-40B)
0.4ns (-40B)
0.5ns (-40B)
7.81µs/SELF
15ns (-40B)
10ns (-40B)
15ns (-40B)
40ns (-40B)
55ns (-40B)
70ns (-40B)
12ns (-40B)
5ns (-40B)
SSTL 2.5V
0.7 (-40B)
10 or 11
3, 2.5. 2
1 clock
2, 4, 8
Micron Technology, Inc., reserves the right to change products or specifications without notice.
184-PIN DDR SDRAM RDIMM
ECC
128
256
13
72
1
0
8
8
4
0
1
MT9VDDF3272
0D
0A
1C
C0
3C
3C
80
08
07
01
48
00
04
50
70
02
82
08
08
01
0E
04
01
02
26
60
70
75
75
28
28
40
60
60
40
40
00
37
46
30
28
50
©2004 Micron Technology, Inc. All rights reserved.
MT9VDDF6472
0D
80
08
07
0B
01
48
00
04
50
70
02
82
08
08
01
0E
04
1C
01
02
26
C0
60
70
75
75
3C
28
3C
28
80
60
06
40
40
00
37
46
30
28
50