MT8VDDT3264HY-335G3 Micron Technology Inc, MT8VDDT3264HY-335G3 Datasheet - Page 12
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MT8VDDT3264HY-335G3
Manufacturer Part Number
MT8VDDT3264HY-335G3
Description
MODULE DDR SDRAM 256MB 200SODIMM
Manufacturer
Micron Technology Inc
Specifications of MT8VDDT3264HY-335G3
Memory Type
DDR SDRAM
Memory Size
256MB
Speed
333MT/s
Package / Case
200-SODIMM
Main Category
DRAM Module
Sub-category
DDR SDRAM
Module Type
200SODIMM
Device Core Size
64b
Organization
32Mx64
Total Density
256MByte
Chip Density
256Mb
Maximum Clock Rate
333MHz
Operating Supply Voltage (typ)
2.5V
Operating Current
1.4A
Number Of Elements
8
Operating Supply Voltage (max)
2.7V
Operating Supply Voltage (min)
2.3V
Operating Temp Range
0C to 70C
Operating Temperature Classification
Commercial
Pin Count
200
Mounting
Socket
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Absolute Maximum Ratings
nent damage to the device. This is a stress rating only,
and functional operation of the device at these or any
other conditions above those indicated in the opera-
Table 10: DC Electrical Characteristics and Operating Conditions
Notes: 1–5, 14; notes appear on pages 18–21; 0°C
Table 11: AC Input Operating Conditions
Notes: 1–5, 12, 48; notes appear on pages 18–21; 0°C
pdf: 09005aef8092973f, source: 09005aef80921669
DD8C16_32_64x64HG.fm - Rev. B 9/04 EN
PARAMETER/CONDITION
PARAMETER/CONDITION
Supply Voltage
I/O Supply Voltage
I/O Reference Voltage
I/O Termination Voltage (system)
Input High (Logic 1) Voltage
Input Low (Logic 0) Voltage
INPUT LEAKAGE CURRENT Any input
0V
(All other pins not under test = 0V)
OUTPUT LEAKAGE CURRENT
(DQ pins are disabled; 0V
OUTPUT LEVELSHigh Current (V
V
Low Current (V
Input High (Logic 1) Voltage
Input Low (Logic 0) Voltage
I/O Reference Voltage
REF
Stresses greater than those listed may cause perma-
Voltage on V
Voltage on V
Voltage on V
, minimum V
Relative to V
Relative to V
Relative to V
V
IN
V
DD
, Vref pin 0V
OUT
REF
DD
DD
TT
)
SS
SS
SS
Q Supply
Supply
= 0.373V, maximum V
and Inputs
. . . . . . . . . . . . . . . . . . . . . -1V to +3.6V
. . . . . . . . . . . . . . . . . . . . -1V to +3.6V
. . . . . . . . . . . . . . . . . . . . -1V to +3.6V
V
OUT
V
IN
OUT
1.35V
V
= V
DD
DD
Q)
Q-0.373V, minimum
REF
Command/Address,
RAS#, CAS#, WE#,
CKE, S#
CK, CK#
DM
DQ, DQS
, maximum V
SYMBOL
V
V
V
T
REF
IH
IL
A
(
(
AC
(
AC
T
AC
+70°C
A
)
)
)
TT
)
+70°C; V
12
tional sections of this specification is not implied.
Exposure to absolute maximum rating conditions for
extended periods may affect reliability.
128MB, 256MB, 512MB (x64, SR)
SYMBOL
0.49
V
V
V
Voltage on I/O Pins
Operating Temperature,
Storage Temperature (plastic) . . . . . . -55°C to +150°C
Short Circuit Output Current. . . . . . . . . . . . . . . 50mA
V
REF
DD
V
V
IH
IL
V
I
I
DD
I
OH
REF
OZ
OL
DD
I
(
Relative to V
TT
(
MIN
I
Micron Technology, Inc., reserves the right to change products or specifications without notice.
T
DC
DC
= V
+ 0.310
Q
A
–
)
)
V
(ambient) . . . . . . . . . . . . . . . . . . . .. 0°C to +70°C
DD
DD
0.49 V
Q = +2.5V ±0.2V
Q
V
V
REF
REF
-16.8
MIN
16.8
-0.3
-16
2.3
2.3
-8
-2
-5
+ 0.15
- 0.04
0.51
200-PIN DDR SODIMM
V
SS
REF
DD
MAX
. . . . . . . . . . . . -0.5V to V
Q 0.51
- 0.310
–
V
DD
V
V
V
REF
REF
Q
DD
MAX
2.7
2.7
16
©2004 Micron Technology, Inc. All rights reserved.
+ 0.04
8
2
5
–
–
- 0.15
+ 0.3
V
DD
UNITS
Q
V
V
V
UNITS
mA
mA
µA
µA
V
V
V
V
V
V
NOTES
DD
25, 35
25, 35
32, 36, 39
NOTES
6
32, 36
33, 34
Q +0.5V
6, 39
7, 39
25
25
46
46