MT18LSDF6472G-133D1 Micron Technology Inc, MT18LSDF6472G-133D1 Datasheet - Page 20
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MT18LSDF6472G-133D1
Manufacturer Part Number
MT18LSDF6472G-133D1
Description
MODULE SDRAM 512MB 168DIMM
Manufacturer
Micron Technology Inc
Datasheet
1.MT18LSDF6472G-133D1.pdf
(26 pages)
Specifications of MT18LSDF6472G-133D1
Memory Type
SDRAM
Memory Size
512MB
Speed
133MHz
Package / Case
168-DIMM
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
Figure 9:
Figure 10:
Table 15:
Table 16:
PDF: 09005aef80a2e32f/Source: 09005aef80d04a5a
SDF18C64x72G.fm - Rev. E 9/05 EN
Select Code
Memory area select code (two arrays)
Protection register select code
Mode
Current address read
Random address read
Sequential read
Byte write
Page write
SCL from Master
Data Output
from Transmitter
Data Output
from Receiver
EEPROM Device Select Code
The most significant bit (b7) is sent first
EEPROM Operating Modes
Definition of Start and Stop
Acknowledge Response From Receiver
SDA
SCL
RW Bit
START
BIT
1
0
1
1
0
0
V
V
V
V
IH
IH
IH
IH
WC
V
V
or
or
or
or
IL
IL
V
V
V
V
IL
IL
IL
IL
b7
1
0
Device Type Identifier
512MB (x72, ECC, SR): 168-PIN SDRAM RDIMM
20
Bytes
≤ 16
≥ 1
1
1
1
b6
0
1
Start, Device select, RW = 1
Start, Device select, RW= 0, Address
Restart, Device select, RW= 1
Similar to current or random address read
Start, Device select, RW = 0
Start, Device select, RW = 0
Micron Technology, Inc., reserves the right to change products or specifications without notice.
STOP
BIT
b5
1
1
b4
8
0
0
Initial Sequence
SA2
SA2
b3
Serial Presence-Detect
Acknowledge
Chip Enable
©2001 Micron Technology, Inc. All rights reserved.
SA1
SA1
b2
9
SA0
SA0
b1
RW
RW
RW
b0