MT18LSDF6472G-133D1 Micron Technology Inc, MT18LSDF6472G-133D1 Datasheet - Page 21
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MT18LSDF6472G-133D1
Manufacturer Part Number
MT18LSDF6472G-133D1
Description
MODULE SDRAM 512MB 168DIMM
Manufacturer
Micron Technology Inc
Datasheet
1.MT18LSDF6472G-133D1.pdf
(26 pages)
Specifications of MT18LSDF6472G-133D1
Memory Type
SDRAM
Memory Size
512MB
Speed
133MHz
Package / Case
168-DIMM
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
Figure 11:
Table 17:
PDF: 09005aef80a2e32f/Source: 09005aef80d04a5a
SDF18C64x72G.fm - Rev. E 9/05 EN
SDA OUT
Parameter/Condition
Supply voltage
Input high voltage: Logic 1; All inputs
Input low voltage: Logic 0; All inputs
Output low voltage: I
Input leakage current: V
Output leakage current: V
Standby current: SCL = SDA = V
Power supply current
SDA IN
SCL
Serial Presence-Detect EEPROM DC Operating Conditions
All voltages referenced to V
SPD EEPROM Timing Diagram
OUT
t SU:STA
IN
= 3mA
OUT
= GND to V
= GND to V
DD
- 0.3V; All other inputs = V
t F
DD
t HD:STA
DD
SS
t LOW
t AA
; V
DDSPD
= +3.3V ±0.3V
t HIGH
t HD:DAT
512MB (x72, ECC, SR): 168-PIN SDRAM RDIMM
21
SS
or V
t DH
DD
t R
Micron Technology, Inc., reserves the right to change products or specifications without notice.
t SU:DAT
I
Symbol
I
CC
CC
V
V
I
V
V
I
CCS
Write
I
LO
Read
DD
OL
LI
IH
IL
V
Serial Presence-Detect
DD
Min
-10
-10
-1
3
–
–
–
–
x 0.7 V
©2001 Micron Technology, Inc. All rights reserved.
V
t SU:STO
DD
DD
Max
3.6
0.4
10
10
30
t BUF
3
1
+ 0.5
x 0.3
UNDEFINED
Units
mA
mA
µA
µA
µA
V
V
V
V