MT18LSDT6472AG-13ED2 Micron Technology Inc, MT18LSDT6472AG-13ED2 Datasheet - Page 20
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MT18LSDT6472AG-13ED2
Manufacturer Part Number
MT18LSDT6472AG-13ED2
Description
MODULE SDRAM 512MB 168DIMM
Manufacturer
Micron Technology Inc
Datasheet
1.MT18LSDT6472AG-13ED2.pdf
(26 pages)
Specifications of MT18LSDT6472AG-13ED2
Memory Type
SDRAM
Memory Size
512MB
Speed
133MHz
Package / Case
168-DIMM
Main Category
DRAM Module
Sub-category
SDRAM
Module Type
168UDIMM
Device Core Size
72b
Organization
64Mx72
Total Density
512MByte
Chip Density
256Mb
Access Time (max)
5.4ns
Maximum Clock Rate
133MHz
Operating Supply Voltage (typ)
3.3V
Operating Current
1.233A
Number Of Elements
18
Operating Supply Voltage (max)
3.6V
Operating Supply Voltage (min)
3V
Operating Temp Range
0C to 65C
Operating Temperature Classification
Commercial
Pin Count
168
Mounting
Socket
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
Table 18: EEPROM Device Select Code
The most significant bit (b7) is sent first
Table 19: EEPROM Operating Modes
09005aef807b3709
SD9_18C32_64X72AG.fm - Rev. E 11/04 EN
Memory Area Select Code (two arrays)
Protection Register Select Code
SDA OUT
MODE
Current Address Read
RandomAddressRead
Sequential Read
Byte Write
Page Write
SDA IN
SCL
t SU:STA
Figure 10: SPD EEPROM Timing Diagram
RW BIT
t F
1
0
1
1
0
0
t HD:STA
t LOW
t AA
256MB (x72, ECC, SR), 512MB (x72, ECC, DR)
V IH or V IL
V IH or V IL
V IH or V IL
V IH or V IL
WC
V
V
IL
IL
t HIGH
t HD:DAT
b7
1
0
DEVICE TYPE IDENTIFIER
20
BYTES
1
1
1
16
1
b6
0
1
t DH
t R
Start, Device Select, RW = 1
Start, Device Select, RW= 0, Address
RESTART, Device Select, RW= 1
Similar to Current or Random Address Read
START, Device Select, RW = 0
START, Device Select, RW = 0
Micron Technology, Inc., reserves the right to change products or specifications without notice.
b5
1
1
t SU:DAT
168-PIN SDRAM UDIMM
b4
0
0
INITIAL SEQUENCE
SA2
SA2
b3
CHIP ENABLE
SA1
SA1
b2
t SU:STO
t BUF
©2004 Micron Technology, Inc.
SA0
SA0
b1
UNDEFINED
RW
RW
RW
b0