MT18LSDT6472AG-13ED2 Micron Technology Inc, MT18LSDT6472AG-13ED2 Datasheet - Page 20

• Manufacturer Part Number: MT18LSDT6472AG-13ED2
• Description: MODULE SDRAM 512MB 168DIMM
• Manufacturer: Micron Technology Inc

Specifications of MT18LSDT6472AG-13ED2

• Memory Type: SDRAM
• Memory Size: 512MB
• Speed: 133MHz
• Package / Case: 168-DIMM
• Main Category: DRAM Module
• Sub-category: SDRAM
• Module Type: 168UDIMM
• Device Core Size: 72b
• Organization: 64Mx72
• Total Density: 512MByte
• Chip Density: 256Mb
• Access Time (max): 5.4ns
• Maximum Clock Rate: 133MHz
• Operating Supply Voltage (typ): 3.3V
• Operating Current: 1.233A
• Number Of Elements: 18
• Operating Supply Voltage (max): 3.6V
• Operating Supply Voltage (min): 3V
• Operating Temp Range: 0C to 65C
• Operating Temperature Classification: Commercial
• Pin Count: 168
• Mounting: Socket
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant

Table 18: EEPROM Device Select Code
The most significant bit (b7) is sent first
Table 19: EEPROM Operating Modes
09005aef807b3709
SD9_18C32_64X72AG.fm - Rev. E 11/04 EN
Memory Area Select Code (two arrays)
Protection Register Select Code
SDA OUT
MODE
Current Address Read
RandomAddressRead
Sequential Read
Byte Write
Page Write
SDA IN
SCL
t SU:STA
Figure 10: SPD EEPROM Timing Diagram
RW BIT
t F
1
0
1
1
0
0
t HD:STA
t LOW
t AA
256MB (x72, ECC, SR), 512MB (x72, ECC, DR)
V IH or V IL
V IH or V IL
V IH or V IL
V IH or V IL
WC
V
V
IL
IL
t HIGH
t HD:DAT
b7
1
0
DEVICE TYPE IDENTIFIER
20
BYTES
1
1
1
16
1
b6
0
1
t DH
t R
Start, Device Select, RW = 1
Start, Device Select, RW= 0, Address
RESTART, Device Select, RW= 1
Similar to Current or Random Address Read
START, Device Select, RW = 0
START, Device Select, RW = 0
Micron Technology, Inc., reserves the right to change products or specifications without notice.
b5
1
1
t SU:DAT
168-PIN SDRAM UDIMM
b4
0
0
INITIAL SEQUENCE
SA2
SA2
b3
CHIP ENABLE
SA1
SA1
b2
t SU:STO
t BUF
©2004 Micron Technology, Inc.
SA0
SA0
b1
UNDEFINED
RW
RW
RW
b0