MT18VDDF12872HY-335D1 Micron Technology Inc, MT18VDDF12872HY-335D1 Datasheet - Page 5

• Manufacturer Part Number: MT18VDDF12872HY-335D1
• Description: MODULE SDRAM DDR 512MB 200SODIMM
• Manufacturer: Micron Technology Inc

Specifications of MT18VDDF12872HY-335D1

• Memory Type: DDR SDRAM
• Memory Size: 1GB
• Speed: 333MT/s
• Package / Case: 200-SODIMM
• Main Category: DRAM Module
• Sub-category: DDR SDRAM
• Module Type: 200SODIMM
• Device Core Size: 72b
• Organization: 128Mx72
• Total Density: 1GByte
• Chip Density: 512Mb
• Access Time (max): 700ps
• Maximum Clock Rate: 333MHz
• Operating Supply Voltage (typ): 2.5V
• Operating Current: 1.53A
• Number Of Elements: 18
• Operating Supply Voltage (max): 2.7V
• Operating Supply Voltage (min): 2.3V
• Operating Temp Range: 0C to 65C
• Operating Temperature Classification: Commercial
• Pin Count: 200
• Mounting: Socket
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Table 5:
Pin numbers may not correlate with symbols. Refer to Pin Assignment Tables on page 3 for more information
09005aef80e487d7
DDF18C64_128x72HG_A.fm - Rev. A 10/03 EN
56, 59, 60, 65, 66, 67, 68, 127,
3, 4, 15, 16, 27, 28, 38, 39, 40,
11, 25, 47, 61, 133, 147, 169,
20, 23, 24, 29, 30, 31, 32, 41,
42, 43, 44, 49, 50, 53, 54, 55,
128, 129, 130, 135, 136, 139,
140, 141, 142, 145, 146, 151,
152, 153, 154, 163, 164, 165,
166, 171, 172, 175, 176, 177,
178, 181, 182, 187, 188, 189,
46, 57, 58, 69, 70, 81, 82, 92,
143, 144, 155, 156, 157, 167,
51, 52, 63, 64, 75, 76, 87, 88,
138, 149, 150, 159, 161, 162,
71, 72, 73, 74, 77, 78, 79, 80,
71, 72, 73, 74, 79, 80, 83, 84
5, 6, 7, 8, 13, 14, 17, 18, 19,
9, 10, 21, 22, 33, 34, 36, 45,
90, 103, 104, 125, 126, 137,
93, 94, 113, 114, 131, 132,
85, 97, 98, 123, 124, 199
168, 179, 180, 191, 192
173, 174, 185, 186, 200
83, 84, 86, 89, 91
PIN NUMBERS
183
190
197
Pin Descriptions (Continued)
DQS0–DQS7
DQ0–DQ63
SYMBOL
CB0–CB7
V
DNU
DDSPD
V
V
NC
DD
SS
Output
Output
Output
Supply
Supply
Supply
Input/
Input/
Input/
TYPE
—
—
Data Strobe: Output with READ data, input with WRITE data.
DQS is edge-aligned with READ data, centered in WRITE data.
Used to capture data.
Check Bits: ECC, 1-bit error detection and correction.
Data I/Os: Data bus.
Power Supply: +2.5V ±0.2V.
Ground.
Serial EEPROM positive power supply: +2.3V to +3.6V.
No Connect: These pins should be left unconnected.
Do Not Use: These pins are not connected on this module, but
are assigned pins on other modules in this product family.
5
Micron Technology, Inc., reserves the right to change products or specifications without notice.
512MB, 1GB (x72, ECC, DR)
200-PIN DDR SODIMM
DESCRIPTION
©2003 Micron Technology, Inc.