MT36LSDF12872G-133D1 Micron Technology Inc, MT36LSDF12872G-133D1 Datasheet - Page 27

• Manufacturer Part Number: MT36LSDF12872G-133D1
• Description: MODULE SDRAM 1GB 168DIMM
• Manufacturer: Micron Technology Inc

Specifications of MT36LSDF12872G-133D1

• Memory Type: SDRAM
• Memory Size: 1GB
• Speed: 133MHz
• Package / Case: 168-DIMM
• Main Category: DRAM Module
• Sub-category: SDRAM
• Module Type: 168RDIMM
• Device Core Size: 72b
• Organization: 128Mx72
• Total Density: 1GByte
• Chip Density: 256Mb
• Access Time (max): 6/5.4ns
• Maximum Clock Rate: 133MHz
• Operating Supply Voltage (typ): 3.3V
• Operating Current: 2.466A
• Number Of Elements: 36
• Operating Supply Voltage (max): 3.6V
• Operating Supply Voltage (min): 3V
• Operating Temp Range: 0C to 65C
• Operating Temperature Classification: Commercial
• Pin Count: 168
• Mounting: Socket
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant

Table 21:
PDF: 09005aef80b1835d/Source: 09005aef80b18348
SD36C128_256x72G.fm - Rev. E 6/05 EN
Byte
10
11
12
13
14
15
16
17
18
19
20
21
22
23
24
25
26
27
28
29
30
31
32
33
34
0
1
2
3
4
5
6
7
8
9
Description
Number of bytes used by Micron
Total number of SPD memory bytes
Memory type
Number of row addresses
Number of column addresses
Number of module ranks
Module data width
Module data width (continued)
Module voltage interface levels
SDRAM cycle time,
SDRAM access from clock,
Module configuration type
Refresh rate/type
SDRAM width (primary SDRAM)
Error-checking SDRAM data width
Minimum clock delay from back-to-back random
column addresses,
Burst lengths supported
Number of banks on SDRAM device
CAS latencies supported
CS latency
WE latency
SDRAM module attributes
SDRAM device attributes: General
SDRAM cycle time,
(CAS latency = 2)
SDRAM access from clock,
(CAS latency = 2)
SDRAM cycle time,
(CAS latency = 1)
SDRAM access from clock,
(CAS latency = 1)
Minimum row precharge time,
Minimum row active to row active,
Minimum RAS# to CAS# delay,
Minimum RAS# pulse width,
Module rank density
Command and address setup time,
Command and address hold time,
Data signal input setup time,
Serial Presence-Detect Matrix
“1”/”0”: Serial data, “driven to HIGH”/”driven to LOW”; V
t
CCD
t
t
t
CK (CAS latency = 3)
CK
CK
t
t
t
AC (CAS latency = 3)
AC
AC
t
RAS (See note 1)
t
DS
t
t
RCD
RP
t
AH,
t
t
AS,
RRD
t
t
CMH
CMS
1GB, 2GB: (x72, ECC, DR) 168-Pin SDRAM RDIMM
27
5.4ns (-13E/-133)
1.5ns (-13E/-133)
0.8ns (-13E/-133)
1.5ns (-13E/-133)
1, 2, 4, 8, PAGE
512MB / 1GB
7.5ns (-133)
7.5ns (-13E)
5.4ns (-13E)
7.81µs/SELF
15ns (-13E)
20ns (-133)
14ns (-13E)
15ns (-133)
15ns (-13E)
20ns (-133)
45ns (-13E)
44ns (-133)
(Version)
7ns (-13E)
-13E/-133
11 or 12
SDRAM
Entry
LVTTL
ECC
128
256
2, 3
13
72
0E
Micron Technology, Inc., reserves the right to change products or specifications without notice.
2
0
4
4
1
4
0
0
–
–
DD
= +3.3V ±0.3V
MT36LSDT12872
0D
2D
0B
2C
80
08
04
02
48
00
01
70
75
54
02
82
04
04
01
8F
04
06
01
01
1F
0E
75
54
00
00
0F
14
0E
0F
0F
14
80
15
08
15
Serial Presence Detect
©2002 Micron Technology, Inc. All rights reserved.
MT36LSDT25672
0D
2D
0C
2C
80
08
04
02
48
00
01
70
75
54
02
82
04
04
01
8F
04
06
01
01
1F
0E
75
54
00
00
0F
14
0E
0F
0F
14
01
15
08
15