MT36LSDT25672G-13EC2 Micron Technology Inc, MT36LSDT25672G-13EC2 Datasheet - Page 12

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MT36LSDT25672G-13EC2

Manufacturer Part Number
MT36LSDT25672G-13EC2
Description
MODULE SDRAM 2GB 168DIMM
Manufacturer
Micron Technology Inc
Datasheet

Specifications of MT36LSDT25672G-13EC2

Memory Type
SDRAM
Memory Size
2GB
Speed
133MHz
Package / Case
168-DIMM
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
Operating Mode
Write Burst Mode
PDF: 09005aef80b1835d/Source: 09005aef80b18348
SD36C128_256x72G.fm - Rev. E 6/05 EN
Table 7:
The normal operating mode is selected by setting M7 and M8 to zero; the other combi-
nations of values for M7 and M8 are reserved for future use and/or test modes. The pro-
grammed burst length applies to both read and write bursts.
Test modes and reserved states should not be used because unknown operation or
incompatibility with future versions may result.
When M9 = 0, the burst length programmed via M0–M2 applies to both read and write
bursts; when M9 = 1, the programmed burst length applies to read bursts, but write
accesses are single-location (non burst) accesses.
CAS Latency Table
Registered mode adds one clock cycle to CAS latency
Speed
-13E
-133
1GB, 2GB: (x72, ECC, DR) 168-Pin SDRAM RDIMM
12
CAS Latency = 2
Allowable Operating Clock Frequency (MHz)
≤ 133
≤ 100
Micron Technology, Inc., reserves the right to change products or specifications without notice.
Mode Register Definition
©2002 Micron Technology, Inc. All rights reserved.
CAS Latency = 3
≤ 143
≤ 133

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