MT9VDDT6472AY-335D1 Micron Technology Inc, MT9VDDT6472AY-335D1 Datasheet - Page 9
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MT9VDDT6472AY-335D1
Manufacturer Part Number
MT9VDDT6472AY-335D1
Description
MODULE SDRAM DDR 512MB 184DIMM
Manufacturer
Micron Technology Inc
Datasheet
1.MT9VDDT6472AY-335D1.pdf
(13 pages)
Specifications of MT9VDDT6472AY-335D1
Memory Type
DDR SDRAM
Memory Size
512MB
Speed
333MT/s
Package / Case
184-DIMM
Main Category
DRAM Module
Sub-category
DDR SDRAM
Module Type
184UDIMM
Device Core Size
72b
Organization
64Mx72
Total Density
512MByte
Chip Density
512Mb
Maximum Clock Rate
333MHz
Operating Supply Voltage (typ)
2.5V
Operating Current
1.575A
Number Of Elements
9
Operating Supply Voltage (max)
2.7V
Operating Supply Voltage (min)
2.3V
Operating Temp Range
0C to 70C
Operating Temperature Classification
Commercial
Pin Count
184
Mounting
Socket
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
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Table 10:
PDF: 09005aef808f912d/Source: 09005aef808f8ccd
DD9C16_32_64x72A.fm - Rev. E 11/07 EN
Parameter/Condition
Operating one bank active-precharge current:
t
cycle; Address and control inputs changing once every two clock
cycles
Operating one bank active-read-precharge current: BL = 2;
t
inputs changing once per clock cycle
Precharge power-down standby current: All device banks idle;
Power-down mode;
Idle standby current: CS# = HIGH; All device banks idle;
t
changing once per clock cycle. V
Active power-down standby current: One device bank active;
Power-down mode;
Active standby current: CS# = HIGH; CKE = HIGH; One device
bank active;
inputs changing twice per clock cycle; Address and other control
inputs changing once per clock cycle
Operating burst READ current: BL = 2; Continuous burst READs;
One device bank active; Address and control inputs changing once
per clock cycle;
Operating burst WRITE current: BL = 2; Continuous burst WRITEs;
One device bank active; Address and control inputs changing once
per clock cycle;
twice per clock cycle
Auto refresh current
Self refresh current: CKE ≤ 0.2V
Operating bank interleave READ current: Four device bank
interleaving READs (BL = 4) with auto precharge;
t
active READ or WRITE commands
DD
CK =
RC =
CK =
CK =
Specifications
t
t
t
t
CK (MIN); DQ, DM, and DQS inputs changing once per clock
RC (MIN);
CK (MIN); CKE = HIGH; Address and other control inputs
CK (MIN); Address and control inputs change only during
t
RC =
I
Values are shown for the MT46V16M8 DDR SDRAM only and are computed from values specified in the
128Mb (16 Meg x 8) component data sheet
DD
t
t
CK =
CK =
t
CK =
Specifications and Conditions – 128MB
t
RAS (MAX);
t
t
CK =
CK =
t
t
CK (MIN); I
CK (MIN); DQ, DM, and DQS inputs changing
t
CK (MIN); I
t
t
CK (MIN); CKE = LOW
CK (MIN); CKE = LOW
128MB, 256MB, 512MB (x72, ECC, SR): 184-Pin DDR SDRAM UDIMM
t
CK =
IN
OUT
OUT
= V
= 0mA
t
REF
= 0mA; Address and control
CK (MIN); DQ, DM, and DQS
for DQ, DM, and DQS
t
t
REFC =
REFC = 15.625µs
t
RC =
t
RC =
t
RC (MIN);
t
t
RFC (MIN)
RC (MIN);
9
Symbol
Micron Technology, Inc., reserves the right to change products or specifications without notice.
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DD
DD
I
I
I
DD
DD
DD
I
I
I
DD
D
DD
DD
DD
DD
DD
5A
4W
3N
4R
2P
2F
3P
0
1
5
6
7
1,035
1,215
1,215
1,395
2,160
3,195
-40B
450
225
450
27
54
36
Electrical Specifications
1,125
1,215
1,260
1,260
2,385
3,195
-335
405
225
450
27
45
27
©2003 Micron Technology, Inc. All rights reserved.
1,080
1,170
1,125
1,980
2,970
-262
990
405
225
450
27
45
27
-26A/
1,080
1,125
1,080
1,980
2,925
-265
945
360
180
405
27
45
18
Units
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA