MT16HTS25664HY-53EA1 Micron Technology Inc, MT16HTS25664HY-53EA1 Datasheet

MODULE DDR2 2GB 200SODIMM

MT16HTS25664HY-53EA1

Manufacturer Part Number
MT16HTS25664HY-53EA1
Description
MODULE DDR2 2GB 200SODIMM
Manufacturer
Micron Technology Inc
Datasheet

Specifications of MT16HTS25664HY-53EA1

Memory Type
DDR2 SDRAM
Memory Size
2GB
Speed
533MT/s
Package / Case
200-SODIMM
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
DDR2 SDRAM SODIMM
MT16HTS25664H – 2GB
For component specifications, refer to Micron’s Web site:
Features
• 200-pin, small outline, dual in-line memory module
• Fast data transfer rates: PC2-3200, PC2-4200, or PC2-
• 2GB (256 Meg x 64)
• V
• V
• JEDEC standard 1.8V I/O (SSTL_18-compatible)
• Differential data strobe (DQS, DQS#) option
• Four-bit prefetch architecture
• DLL to align DQ and DQS transitions with CK
• Multiple internal device banks for concurrent
• Programmable CAS latency (CL)
• Posted CAS additive latency (AL)
• WRITE latency = READ latency - 1
• Programmable burst lengths: 4 or 8
• Adjustable data-output drive strength
• 64ms, 8,192-cycle refresh
• On-die termination (ODT)
• Serial presence detect (SPD) with EEPROM
• Gold edge contacts
• Dual rank
PDF: 09005aef821e5bf3/Source: 09005aef82198d54
HTS16C256x64H.fm - Rev. A 4/06 EN
(SODIMM)
5300
operation
DD
DDSPD
= V
DD
= +1.7V to +3.6V
Q = +1.8V
Products and specifications discussed herein are subject to change by Micron without notice.
t
CK
www.micron.com/products/ddr2sdram
2GB: (x64, DR) 200-Pin DDR2 SDRAM SODIMM
1
Figure 1:
Notes: 1. CL = CAS (READ) Latency.
Options
• Package
• Frequency/CAS latency
• PCB height
– 200-pin SODIMM (lead-free)
– 3ns @ CL = 5 (DDR2-667)
– 3.75ns @ CL = 4 (DDR2-533)
– 5.0ns @ CL = 3 (DDR2-400)
– 1.18in (29.97mm)
Micron Technology, Inc., reserves the right to change products or specifications without notice.
2. Contact Micron for product availability.
200-pin SODIMM (MO-224 R/C “B”)
1
©2006 Micron Technology, Inc. All rights reserved.
2
Marking
Features
-53E
-40E
-667
Y

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MT16HTS25664HY-53EA1 Summary of contents

Page 1

DDR2 SDRAM SODIMM MT16HTS25664H – 2GB For component specifications, refer to Micron’s Web site: Features • 200-pin, small outline, dual in-line memory module (SODIMM) • Fast data transfer rates: PC2-3200, PC2-4200, or PC2- 5300 • 2GB (256 Meg x 64) ...

Page 2

... Part Number Density MT16HTS25664HY-667__ 2GB MT16HTS25664HY-53E__ 2GB MT16HTS25664HY-40E__ 2GB Notes: 1. All part numbers end with a two-place code (not shown), designating component and PCB revisions. Consult factory for current revision codes. Example: MT16HTF12864HY-40EA1. PDF: 09005aef821e5bf3/Source: 09005aef82198d54 HTS16C256x64H.fm - Rev. A 4/06 EN 2GB: (x64, DR) 200-Pin DDR2 SDRAM SODIMM ...

Page 3

Module Pin Assignments and Descriptions Table 4: Pin Assignment 200-Pin SODIMM Front Pin Symbol Pin Symbol Pin Symbol Pin Symbol Pin Symbol Pin Symbol Pin Symbol Pin Symbol DQS2 101 REF 103 SS ...

Page 4

Table 5: Pin Descriptions Pin numbers may not correlate with symbols; refer to Pin Assignment tables on page 3 for more information Pin Numbers 114, 119 ODT0, ODT1 30, 32, 164, 166 CK0, CK0# CK1, CK1# 79, 80 CKE0, CKE1 ...

Page 5

Table 5: Pin Descriptions Pin numbers may not correlate with symbols; refer to Pin Assignment tables on page 3 for more information Pin Numbers 197 198, 200 14, 16, 17, 19, 20, DQ0–DQ63 22, 23, 25, ...

Page 6

... Functional Block Diagram Unless otherwise noted, resistor values are 22Ω. Micron module part numbers are explained in the Module Part Numbering Guide a numbering.html. Modules use the following DDR2 SDRAM devices: MT47H128M8BT (1GB). Component specifications are available at: ddr2sdram. Figure 3: Functional Block Diagram 3Ω ...

Page 7

... READs and by the memory controller during WRITEs. DQS is edge- aligned with data for READs and center-aligned with data for WRITEs. DDR2 SDRAM modules operate from a differential clock (CK and CK#); the crossing of CK going HIGH and CK# going LOW will be referred to as the positive edge of CK. ...

Page 8

... Simulations can then render a considerably more accurate result. JEDEC modules are now designed by using simula- tions to close timing budgets. PDF: 09005aef821e5bf3/Source: 09005aef82198d54 HTS16C256x64H ...

Page 9

Table 7: DDR2 I Specifications and Conditions – 2GB DD Values shown for DDR2 SDRAM components only Parameter/Condition Operating one bank active-precharge current RAS = RAS MIN (I ); CKE is HIGH HIGH between ...

Page 10

AC Timing and Operating Conditions Recommended AC operating conditions are given in the DDR2 component data sheets, available at www.micron.com/products/ddr2sdram. Module speed grades correlate with component speed grades as shown in the following table: Table 8: Module and Component Speed ...

Page 11

Figure 4: Data Validity SCL SDA Figure 5: Definition of Start and Stop SCL SDA Figure 6: Acknowledge Response From Receiver SCL from Master Data Output from Transmitter Data Output from Receiver PDF: 09005aef821e5bf3/Source: 09005aef82198d54 HTS16C256x64H.fm - Rev. A 4/06 ...

Page 12

Table 9: EEPROM Device Select Code The most significant bit (b7) is sent first Select Code Memory area select code (two arrays) Protection register select code Table 10: EEPROM Operating Modes Mode Current address read Random address read Sequential read ...

Page 13

Table 11: Serial Presence-Detect EEPROM DC Operating Conditions All voltages referenced to V Parameter/Condition Supply voltage Input high voltage: Logic 1; All inputs Inputl low voltage: Logic 0; All inputs Output low voltage 3mA OUT Input leakage current: ...

Page 14

Table 13: Serial Presence-Detect Matrix “1”/“0”: Serial Data, “driven to HIGH”/“driven to LOW”; table notes located on page 15 Byte Description 0 Number of SPD bytes used by Micron 1 Total number of bytes in SPD device 2 Fundamental memory ...

Page 15

Table 13: Serial Presence-Detect Matrix “1”/“0”: Serial Data, “driven to HIGH”/“driven to LOW”; table notes located on page 15 Byte Description 33 Address and command hold time, 34 Data/ Data mask input setup time, 35 Data/ Data mask input hold ...

Page 16

Module Dimensions Figure 8: 200-pin DDR2 SODIMM Module Dimensions 0.079 (2.00) R (2X) U1 0.071 (1.80) (2X) 0.236 (6.00) 0.100 (2.55) 0.039 (0.99) 0.079 (2.00) U6 PIN 200 Notes: 1. All dimensions are in inches (millimeters); MAX/MIN or TYP where ...

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