MT16HTS25664HY-667A1 Micron Technology Inc, MT16HTS25664HY-667A1 Datasheet - Page 12
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MT16HTS25664HY-667A1
Manufacturer Part Number
MT16HTS25664HY-667A1
Description
MODULE DDR2 2GB 200SODIMM
Manufacturer
Micron Technology Inc
Specifications of MT16HTS25664HY-667A1
Memory Type
DDR2 SDRAM
Memory Size
2GB
Speed
667MT/s
Package / Case
200-SODIMM
Main Category
DRAM Module
Sub-category
DDR2 SDRAM
Module Type
200SODIMM
Device Core Size
64b
Organization
256Mx64
Total Density
2GByte
Chip Density
1Gb
Maximum Clock Rate
667MHz
Operating Supply Voltage (typ)
1.8V
Operating Current
1.176A
Number Of Elements
16
Operating Supply Voltage (max)
1.9V
Operating Supply Voltage (min)
1.7V
Operating Temp Range
0C to 70C
Operating Temperature Classification
Commercial
Pin Count
200
Mounting
Socket
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Table 9:
Table 10:
Figure 7:
PDF: 09005aef821e5bf3/Source: 09005aef82198d54
HTS16C256x64H.fm - Rev. A 4/06 EN
Select Code
Mode
Memory area select code (two arrays)
Protection register select code
Current address read
Random address read
Sequential read
Byte write
Page write
SDA OUT
SDA IN
SCL
EEPROM Device Select Code
The most significant bit (b7) is sent first
EEPROM Operating Modes
SPD EEPROM Timing Diagram
t SU:STA
RW Bit
t F
1
0
1
1
0
0
t HD:STA
t LOW
t AA
V
V
V
V
IH
IH
IH
IH
WC
V
V
or V
or V
or V
or V
IL
IL
b7
t HIGH
IL
IL
IL
IL
1
0
t HD:DAT
Device Type Identifier
2GB: (x64, DR) 200-Pin DDR2 SDRAM SODIMM
Bytes
≤ 16
12
≥ 1
1
1
1
1
b6
0
1
t DH
t R
Initial Sequence
START, Device select, RW = ‘1’
START, Device select, RW = ‘0’, Address
reSTART, Device select, RW = ‘1’
Similar to current or random address read
START, Device select, RW = ‘0’
START, Device select, RW = ‘0’
Micron Technology, Inc., reserves the right to change products or specifications without notice.
b5
t SU:DAT
1
1
b4
0
0
SA2
SA2
b3
Serial Presence-Detect
Chip Enable
©2006 Micron Technology, Inc. All rights reserved.
t SU:STO
SA1
SA1
b2
t BUF
UNDEFINED
SA0
SA0
b1
RW
RW
RW
b0