MT16HTS25664HY-667A1 Micron Technology Inc, MT16HTS25664HY-667A1 Datasheet - Page 14

• Manufacturer Part Number: MT16HTS25664HY-667A1
• Description: MODULE DDR2 2GB 200SODIMM
• Manufacturer: Micron Technology Inc

Specifications of MT16HTS25664HY-667A1

• Memory Type: DDR2 SDRAM
• Memory Size: 2GB
• Speed: 667MT/s
• Package / Case: 200-SODIMM
• Main Category: DRAM Module
• Sub-category: DDR2 SDRAM
• Module Type: 200SODIMM
• Device Core Size: 64b
• Organization: 256Mx64
• Total Density: 2GByte
• Chip Density: 1Gb
• Maximum Clock Rate: 667MHz
• Operating Supply Voltage (typ): 1.8V
• Operating Current: 1.176A
• Number Of Elements: 16
• Operating Supply Voltage (max): 1.9V
• Operating Supply Voltage (min): 1.7V
• Operating Temp Range: 0C to 70C
• Operating Temperature Classification: Commercial
• Pin Count: 200
• Mounting: Socket
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Table 13:
PDF: 09005aef821e5bf3/Source: 09005aef82198d54
HTS16C256x64H.fm - Rev. A 4/06 EN
Byte
10
11
12
13
14
15
16
17
18
19
20
21
22
23
24
25
26
27
28
29
30
31
32
0
1
2
3
4
5
6
7
8
9
Number of SPD bytes used by Micron
Total number of bytes in SPD device
Fundamental memory type
Number of row addresses on assembly
Number of column addresses on assembly
DIMM height and module ranks
Module data width
Reserved
Module voltage interface levels
SDRAM cycle time,
SDRAM access from clock,
byte 18)
Module configuration type
Refresh rate/type
SDRAM device width (primary SDRAM)
Error-checking SDRAM data width
Reserved
Burst lengths supported
Number of banks on SDRAM device
CAS latencies supported
Module thickness
DDR2 DIMM type
SDRAM module attributes
SDRAM device attributes: Weak driver (01) and 50Ω ODT
(03)
SDRAM cycle time,
SDRAM access from CK,
SDRAM cycle time,
SDRAM access from CK,
Minimum row precharge time,
Minimum row active to row active,
Minimum RAS# to CAS# delay,
Minimum RAS# pulse width,
Module rank density
Address and command setup time,
Serial Presence-Detect Matrix
“1”/“0”: Serial Data, “driven to HIGH”/“driven to LOW”; table notes located on page 15
t
t
t
CK (CL = maximum value, see byte 18)
CK, MAX CL - 1
CK, MAX CL - 2
Description
t
t
AC, MAX CL - 1
AC, MAX CL - 2
t
AC (CL = maximum value, see
t
RAS (see note 1)
t
t
RCD
RP
t
t
IS
RRD
b
2GB: (x64, DR) 200-Pin DDR2 SDRAM SODIMM
14
Micron Technology, Inc., reserves the right to change products or specifications without notice.
1.18in, dual rank
Entry (Version)
-53E/-40E (4, 3)
-53E/-40E(N/A)
-53E/-40E(N/A)
DDR2 SDRAM
-667 (5, 4, 3)
7.81µs/SELF
SSTL 1.8V
-53E/-40E
-53E/-40E
-667/-53E
-667/-53E
-667/-53E
SODIMM
-667
-53E
-40E
-667
-53E
-40E
-667
-667
-40E
-667
-667
-40E
-40E
1GB
128
256
N/A
4, 8
14
10
64
8
8
Serial Presence-Detect
©2006 Micron Technology, Inc. All rights reserved.
MT16HTS25664H
0A
3D
3D
2D
80
08
08
0E
61
40
00
05
30
50
45
50
60
00
82
08
00
00
0C
08
38
18
01
04
00
03
01
50
45
60
50
00
45
00
3C
1E
3C
28
01
20
35