MT4VDDT1664HY-335F3 Micron Technology Inc, MT4VDDT1664HY-335F3 Datasheet - Page 25
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MT4VDDT1664HY-335F3
Manufacturer Part Number
MT4VDDT1664HY-335F3
Description
MODULE DDR 128MB 200-SODIMM
Manufacturer
Micron Technology Inc
Specifications of MT4VDDT1664HY-335F3
Memory Type
DDR SDRAM
Memory Size
128MB
Speed
200MHz
Package / Case
200-SODIMM
Main Category
DRAM Module
Sub-category
DDR SDRAM
Module Type
200SODIMM
Device Core Size
64b
Organization
16Mx64
Total Density
128MByte
Chip Density
256Mb
Access Time (max)
700ps
Maximum Clock Rate
333MHz
Operating Supply Voltage (typ)
2.5V
Operating Current
880mA
Number Of Elements
4
Operating Supply Voltage (max)
2.7V
Operating Supply Voltage (min)
2.3V
Operating Temp Range
0C to 70C
Operating Temperature Classification
Commercial
Pin Count
200
Mounting
Socket
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
557-1344
Table 17: EEPROM Device Select Code
Most significant bit (b7) is sent first
Table 18: EEPROM Operating Modes
pdf: 09005aef8086ea3d, source: 09005aef8086ea0b
DD4C8_16_32x64HG.fm - Rev. C 9/04 EN
SELECT CODE
MODE
SDA OUT
Memory Area Select Code (two arrays)
Protection Register Select Code
Current Address Read
Random Address Read
Sequential Read
Byte Write
Page Write
SDA IN
SCL
t SU:STA
Figure 17: SPD EEPROM Timing Diagram
t F
RW BIT
1
0
1
1
0
0
t HD:STA
t LOW
t AA
V
V
V
V
IH
IH
IH
IH
WC
V
V
or V
or V
or V
or V
IL
IL
b7
t HIGH
1
0
IL
IL
IL
IL
DEVICE TYPE IDENTIFIER
t HD:DAT
BYTES
25
1
1
1
1
16
1
b6
0
1
t DH
64MB, 128MB, 256MB (x64, SR)
INITIAL SEQUENCE
START, Device Select, RW = ‘1’
START, Device Select, RW = ‘0’, Address
reSTART, Device Select, RW = ‘1’
Similar to Current or Random Address Read
START, Device Select, RW = ‘0’
START, Device Select, RW = ‘0’
200-PIN DDR SDRAM SODIMM
t R
Micron Technology, Inc., reserves the right to change products or specifications without notice.
b5
1
1
t SU:DAT
b4
0
0
SA2
SA2
b3
CHIP ENABLE
©2004 Micron Technology, Inc. All rights reserved.
SA1
SA1
b2
t SU:STO
t BUF
SA0
SA0
b1
UNDEFINED
RW
RW
RW
b0