MAX11068EVKIT+ Maxim Integrated Products, MAX11068EVKIT+ Datasheet - Page 2

• Manufacturer Part Number: MAX11068EVKIT+
• Description: KIT SMART BATT MEASUREMENT 12CH
• Manufacturer: Maxim Integrated Products

Specifications of MAX11068EVKIT+

• Main Purpose: Power Management, Battery Monitor, Car
• Utilized Ic / Part: MAX11068
• Primary Attributes: Monitors Current, Voltage, Temperature
• Secondary Attributes: 1 ~ 12 Cell- Li-Ion, 1 ~ 12 Cell- NiMH
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Embedded: -

12-Channel, High-Voltage Sensor, Smart
Data-Acquisition Interface
ABSOLUTE MAXIMUM RATINGS
HV, VDD U , GND U , DCIN to AGND ......................-0.3V to +80V
HV to C12 ................................................................-0.3V to +6V
C1–C12 to AGND ......................................-0.3V to (V
C(N+1) to C(N) .....................................................-0.3V to +9.0V
C0 to AGND .........................................................-0.3V to +4.0V
SHDN to AGND .....................................................-0.3V to +60V
VAA to AGND .......................................................-0.3V to +4.0V
VDD L to GND L .....................................................-0.3V to +4.0V
VDD U to GND U ....................................................-0.3V to +6.0V
GND U to GND L .....................................................-0.3V to +80V
AGND to GND L ....................................................-0.3V to +0.3V
AUXIN1, AUXIN2, THRM to AGND ......................-0.3V to +6.0V
REF to AGND ........................................... -0.3V to (VAA + 0.3V)
SCL
SCL
CP+ to AGND ......................... (GND U - 1.0V) to (VDD
CP- to AGND ......................................... -0.3V to (GND
Note 1: Human Body Model to Specification MIL-STD-883 Method 3015.7.
Note 2: Maximum average power dissipation for time period τ. Peak current must never exceed 2A. τ is one time constant (in µs) of
2
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional
operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute
maximum rating conditions for extended periods may affect device reliability.
ELECTRICAL CHARACTERISTICS
(T
specified from -40NC to +105NC per the application circuit in Figure 4.)
C0–C12 INPUTS
Differential Cell Input-Voltage
Range
Cell Input Common-Mode Voltage
Range (Note 5)
Input-Leakage Current
ADC Resolution
Channel- Conversion Time
Channel Accuracy
A
L
U
= T
, SDA
, SDA
MIN
hot-plug current waveform through a given diode. For example, if τ is 330µs, the maximum average diode power dissipation
is 0.793W. Actual average power dissipation must be calculated from current waveform for the application circuit.
PARAMETER
L
U
, ALRM
to T
, ALRM
MAX
L
U
, unless otherwise noted. V
to GND
to GND
L
U
............... -0.3V to (VDD
.............-0.3V to (VDD
VCELL
SYMBOL
ADC
VC
I
CXIN
t
S
XIN
BITS
XIN
GNDU
HV
Any 2 inputs
CN+1 to CN for C12–C0 (Note 2)
Input C1 referred to AGND
Inputs C2 through C[TOP] referred to
AGND
C[TOP] referred to AGND
C0 referred to AGND
ADC off; C(N) to C(N+1) = 5V
ADC ON; C(N) to C(N+1) = 3V
LSB size is +1.22mV
Highest enabled input
Enabled inputs except highest
T
-10NC < T
(Note 3)
-40NC < T
(Note 3)
-40NC < T
U
U
U
A
L
= V
= +25NC (Note 4); V
+ 0.3V)
+ 0.3V)
+ 0.3V)
+ 1.0V)
+ 0.3V)
DCIN
A
A
A
= 18V to +60V, typical values are at T
< +50NC; V
< +85NC; V
< +105NC; V
CONDITIONS
GPIO0, GPIO1, GPIO2 ........................... -0.3V to (VDD
ESD Rating (HBM, Note 1) ..................................................Q2kV
Maximum Continuous Current into Any Pin .......................20mA
ESD Diode Maximum Average
Power Dissipation for Hot Plug (Note 2) ... ..................14.4/√τ W
Continuous Power: Multilayer Board ..........................1269.8mW
Continuous Power: Single-Layer Board
Operating Temperature Range ....................... .-40NC to +105NC
Storage Temperature Range ............................ -55NC to +150NC
Junction Temperature (continuous) ................................+150NC
Lead Temperature (soldering, 10s) ................................+300NC
Soldering Temperature (reflow) ......................................+260NC
C0–C12, AUXIN1, AUXIN2, REF, VAA, VDD
VDD
ALRM
(derating 15.9mW/NC above +70NC).......................1095.9mW
CELL
CELL
L
CELL
CELL
, GND
U
, SCL
= 3.0V
= 3.0V
= 3.0V
= 3.0V
L
, DCIN, SHDN, CP+, CP-, HV, SCL
L
, SDA
L
, ALRM
-0.05
MIN
-1.0
0.5
0.7
0.7
-10
-15
-20
12
-5
L
, GPIO0, GPIO1, GPIO2
A
Q10.0
= +25NC, unless otherwise
11.34
TYP
7.66
GND
+0.05
U
MAX
+1.0
+10
+15
+20
4.7
7.0
, GND
+5
U
U
, SDA
U
L
Channel
,
UNITS
+ 0.3V)
Bits
Fs/
mV
FA
U
V
V
,