STEVAL-ISA051V1 STMicroelectronics, STEVAL-ISA051V1 Datasheet - Page 35

• Manufacturer Part Number: STEVAL-ISA051V1
• Description: BOARD EVAL PM6670S DDR2/3
• Manufacturer: STMicroelectronics
• Type: DC/DC Switching Converters, Regulators & Controllersr

Specifications of STEVAL-ISA051V1

• Design Resources: STEVAL-ISA051V1 Gerber Files STEVAL-ISA051V1 Schematic STEVAL-ISA051V1 Bill of Material
• Main Purpose: Special Purpose DC/DC, DDR Memory Supply
• Outputs And Type: 4, Non-Isolated
• Voltage - Output: 1.5V, 1.8V
• Voltage - Input: 4.5 ~ 28V
• Regulator Topology: Buck
• Board Type: Fully Populated
• Utilized Ic / Part: PM6670
• Input Voltage: 4.5 V to 28 V
• Output Voltage: 1.8 V, 1.5 V
• Product: Power Management Modules
• Silicon Manufacturer: ST Micro
• Silicon Core Number: PM6670S
• Kit Application Type: Power Management
• Application Sub Type: DDR2/3 Memory Power Supply Controller
• Kit Contents: Board
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Current - Output: -
• Power - Output: -
• Frequency - Switching: -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• For Use With/related Products: PM6670S
• Other names: 497-8411

PM6670S
7.1.9
7.1.10
Gate drivers
The integrated high-current gate drivers allow using different power MOSFETs. The high-
side driver uses a bootstrap circuit which is supplied by the +5 V rail. The BOOT and
PHASE pins work respectively as supply and return path for the high-side driver, while the
low-side driver is directly fed through VCC and PGND pins.
An important feature of the PM6670S gate drivers is the adaptive anti-cross-conduction
circuitry, which prevents high-side and low-side MOSFETs from being turned on at the same
time. When the high-side MOSFET is turned off, the voltage at the PHASE node begins to
fall. The low-side MOSFET is turned on only when the voltage at the PHASE node reaches
an internal threshold (2.5 V typ.). Similarly, when the low-side MOSFET is turned off, the
high-side one remains off until the LGATE pin voltage is above 1V.
The power dissipation of the drivers is a function of the total gate charge of the external
power MOSFETs and the switching frequency, as shown in the following equation:
Equation 23
The low-side driver has been designed to have a low-resistance pull-down transistor
(0.6 Ω typ.) in order to prevent undesired ignition of the low-side MOSFET due to the Miller
effect.
Reference voltage and bandgap
The 1.237 V internal bandgap reference has a granted accuracy of ±1 % over the
0 °C to 85 °C temperature range. The VREF pin is a buffered replica of the bandgap voltage.
It can supply up to ±100 μA and is suitable to set the intermediate level of MODE, DDRSEL
and DSCG multifunction pins. A 100 nF (min.) bypass capacitor toward SGND is required to
enhance noise rejection. If VREF falls below 0.8 V (typ.), the system detects a fault condition
and all the circuitry is turned OFF.
An internal divider derives a 0.9 V ± 1 % voltage (Vr) from the bandgap. This voltage is used
as a reference by the switching regulator output. The over-voltage protection, the under-
voltage protection and the power good signal are also referred to Vr.
Doc ID 14432 Rev 4
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Device description
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