NCP3063DIPINVEVB ON Semiconductor, NCP3063DIPINVEVB Datasheet - Page 13

• Manufacturer Part Number: NCP3063DIPINVEVB
• Description: EVAL BOARD FOR NCP3063DIPINV
• Manufacturer: ON Semiconductor

Specifications of NCP3063DIPINVEVB

• Design Resources: NCP3063DIPINVEVB BOM NCP3063DIPINVEVB Gerbers NCP3063 EVB Schematic
• Main Purpose: DC/DC, Negative Inverter
• Outputs And Type: 1, Non-Isolated
• Voltage - Output: -12V
• Voltage - Input: 4.5 ~ 6 V
• Regulator Topology: Inverting
• Frequency - Switching: 250kHz
• Board Type: Fully Populated
• Utilized Ic / Part: NCP3063
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Current - Output: -
• Power - Output: -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• For Use With/related Products: NCP3063DIPINV
• Other names: NCP3063DIPINVEVBOS

86
86
84
84
82
82
80
80
78
78
76
76
74
74
72
72
70
70
V
0V
IN
6
6
= 8 − 18 V/0.6 A
Figure 26. Typical Efficiency for Application
C1
330m
8
8
C2
100n
Figure 25. Typical Boost Application Schematic with External NMOS Transistor
10
10
Shown in Figure 25.
M18
INPUT VOLTAGE (V)
R3
12
12
8
7
6
5
R4
1k
R5
R1
R2
IC1 NCP3063
N.C.
COMP
I
V
C3
PK
CC
14
14
10n
82m
1k
SWC
24k
SWE
GND
I
TC
LOAD
16
16
1
2
3
4
= 350 mA
18
18
http://onsemi.com
C4
1n2
20
20
C5
470
R7
13
6n8
L1
wide input voltage ranges and higher power is required. The
suitable schematic with an additional NMOS transistor and
its driving circuit is shown in the Figure 25. The driving
circuit is controlled from SWE Pin of the NCP3063 through
frequency compensated resistor divider R7/R8. The driver
IC2 is ON Semiconductor low cost dual NPN/PNP
transistor BC846BPD. Its NPN transistor is connected as a
super diode for charging the gate capacitance. The PNP
transistor works as an emitter follower for discharging the
gate capacitor. This configuration assures sharp driving
edge between 50 − 100 ns as well as it limits power
consumption of R7/R8 divider down to 50 mW. The output
current limit is balanced by resistor R3. The fast switching
with low R
up to 85% in automotive applications.
External transistor is recommended in applications where
R8
1k
10m
DS(on)
6
2
5
IC2 BC846BPD
NMOS transistor will achieve efficiencies
NTD18N06
1
4
3
G
Q1
D
S
1N5819
D1
100n
C6
V
OUT
330m
C7
= 31 V/0.35 A
+
GND