OM11027 NXP Semiconductors, OM11027 Datasheet - Page 78

BOARD EVAL LPC2939

OM11027

Manufacturer Part Number
OM11027
Description
BOARD EVAL LPC2939
Manufacturer
NXP Semiconductors
Type
MCUr
Datasheet

Specifications of OM11027

Contents
Board
For Use With/related Products
LPC2939
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
568-4787
NXP Semiconductors
LPC2939_3
Product data sheet
9.5 Dynamic characteristics: flash memory and EEPROM
Table 40.
T
V
[1]
Table 41.
T
V
Symbol
N
t
t
t
t
t
t
t
t
Symbol
f
N
t
ret
prog
er
init
wr(pg)
fl(BIST)
a(clk)
a(A)
clk
ret
amb
DDA(ADC3V3)
amb
DDA(ADC3V3)
endu
endu
Number of program/erase cycles.
=
=
40
40
Parameter
endurance
retention time
programming time
erase time
initialization time
page write time
flash word BIST time
clock access time
address access time
Flash characteristics
EEPROM characteristics
C to +85
C to +85
Parameter
clock frequency
endurance
retention time
= 3.0 V to 3.6 V; all voltages are measured with respect to ground.
= 3.0 V to 3.6 V; all voltages are measured with respect to ground.
All information provided in this document is subject to legal disclaimers.
C; V
C; V
Rev. 03 — 7 April 2010
DD(CORE)
DD(CORE)
Conditions
powered
Conditions
powered
unpowered
word
global
sector
= V
= V
DD(OSC_PLL)
DD(OSC_PLL)
ARM9 microcontroller with CAN, LIN, and USB
; V
; V
Min
200
100000
10
DD(IO)
DD(IO)
[1]
= 2.7 V to 3.6 V;
Min
10000
10
20
0.95
95
95
-
0.95
-
-
-
= 2.7 V to 3.6 V;
Typ
375
500000
-
Typ
-
-
-
1
100
100
-
1
38
-
-
LPC2939
© NXP B.V. 2010. All rights reserved.
Max
-
-
-
1.05
105
105
150
1.05
70
63.4
60.3
Max
400
-
-
Unit
kHz
cycles
years
Unit
cycles
years
years
ms
ms
ms
s
ms
ns
ns
ns
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