STD30NF06 STMicroelectronics, STD30NF06 Datasheet

MOSFET N-CH 60V 28A DPAK

STD30NF06

Manufacturer Part Number
STD30NF06
Description
MOSFET N-CH 60V 28A DPAK
Manufacturer
STMicroelectronics
Series
STripFET™r
Datasheet

Specifications of STD30NF06

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
28 mOhm @ 15A, 10V
Drain To Source Voltage (vdss)
60V
Current - Continuous Drain (id) @ 25° C
28A
Vgs(th) (max) @ Id
4V @ 250µA
Gate Charge (qg) @ Vgs
58nC @ 10V
Input Capacitance (ciss) @ Vds
1750pF @ 25V
Power - Max
70W
Mounting Type
Surface Mount
Package / Case
DPak, TO-252 (2 leads+tab), SC-63
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
497-5734-2

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DESCRIPTION
This Power MOSFET is the latest development of
STMicroelectronis unique "Single Feature Size™" strip-
based process. The resulting transistor shows extremely
high packing density for low on-resistance, rugged
avalanche characteristics and less critical alignment
steps
reproducibility.
APPLICATIONS
ABSOLUTE MAXIMUM RATINGS
(
March 2002
.
STD30NF06
TYPICAL R
EXCEPTIONAL dv/dt CAPABILITY
100% AVALANCHE TESTED
THROUGH-HOLE IPAK (TO-251) POWER
PACKAGE IN TUBE (SUFFIX “-1")
SURFACE-MOUNTING DPAK (TO-252)
POWER PACKAGE IN TAPE & REEL
(SUFFIX “T4")
HIGH CURRENT, HIGH SWITCHING SPEED
MOTOR CONTROL , AUDIO AMPLIFIERS
SOLENOID AND RELAY DRIVERS
DC-DC & DC-AC CONVERTERS
Pulse width limited by safe operating area.
Symbol
dv/dt
E
I
V
DM
V
V
P
AS (2)
T
DGR
I
I
T
GS
stg
DS
TYPE
D
D
tot
(
j
(1)
therefore
Drain-source Voltage (V
Drain-gate Voltage (R
Gate- source Voltage
Drain Current (continuous) at T
Drain Current (continuous) at T
Drain Current (pulsed)
Total Dissipation at T
Derating Factor
Peak Diode Recovery voltage slope
Single Pulse Avalanche Energy
Storage Temperature
Max. Operating Junction Temperature
DS
(on) = 0.020
a
V
60 V
DSS
remarkable
Parameter
N-CHANNEL 60V - 0.020
<0.028
R
DS(on)
C
GS
= 25°C
GS
= 20 k )
manufacturing
= 0)
C
C
28 A
= 25°C
= 100°C
I
D
STripFET™ II POWER MOSFET
INTERNAL SCHEMATIC DIAGRAM
(1) I
(2) Starting T
SD
28A, di/dt 300A/µs, V
(Suffix “-1”)
j
TO-251
= 25
IPAK
-55 to 175
o
Value
C, I
± 20
0.47
112
230
60
60
28
20
70
10
D
1
= 15A, V
2
- 28A IPAK/DPAK
3
DD
STD30NF06
DD
V
(BR)DSS
= 30V
(Suffix “T4”)
, T
TO-252
DPAK
j
T
JMAX
1
W/°C
V/ns
Unit
mJ
3
°C
W
V
V
V
A
A
A
1/10

Related parts for STD30NF06

STD30NF06 Summary of contents

Page 1

... March 2002 . STripFET™ II POWER MOSFET R I DS(on INTERNAL SCHEMATIC DIAGRAM manufacturing = 25° 100° 25° (2) Starting T STD30NF06 - 28A IPAK/DPAK IPAK DPAK TO-251 TO-252 (Suffix “-1”) (Suffix “T4”) Value 60 60 ± 112 70 0.47 10 230 -55 to 175 28A, di/dt 300A/µs, V ...

Page 2

... STD30NF06 THERMAL DATA Rthj-case Thermal Resistance Junction-case Rthj-amb Thermal Resistance Junction-ambient T Maximum Lead Temperature For Soldering Purpose l ELECTRICAL CHARACTERISTICS (T OFF Symbol Parameter Drain-source V (BR)DSS Breakdown Voltage Zero Gate Voltage I DSS Drain Current (V GS Gate-body Leakage I GSS Current ( (*) ON Symbol Parameter V Gate Threshold Voltage ...

Page 3

... I = 38A V = 10V Test Conditions = 4 (Resistive Load, Figure 3) Test Conditions di/dt = 100A/µ 150° (see test circuit, Figure 5) Thermal Impedance STD30NF06 Min. Typ. Max. Unit 20 ns 100 9 Min. Typ. Max. Unit Min. Typ. Max. Unit 28 A 112 A 1 260 C 5.5 ...

Page 4

... STD30NF06 Output Characteristics Transconductance Gate Charge vs Gate-source Voltage 4/10 Transfer Characteristics Static Drain-source On Resistance Capacitance Variations ...

Page 5

... Normalized Gate Threshold Voltage vs Temperature Source-drain Diode Forward Characteristics . Normalized on Resistance vs Temperature Normalized Breakdown Voltage vs Temperature . STD30NF06 5/10 ...

Page 6

... STD30NF06 Fig. 1: Unclamped Inductive Load Test Circuit Fig. 1: Unclamped Inductive Load Test Circuit Fig. 3: Switching Times Test Circuits For Resistive Load Fig. 5: Test Circuit For Inductive Load Switching And Diode Recovery Times 6/10 Fig. 2: Unclamped Inductive Waveform Fig. 4: Gate Charge test Circuit ...

Page 7

... STD30NF06 inch TYP. MAX. 0.094 0.043 0.051 0.031 0.212 0.033 0.012 0.037 0.023 0.023 0.244 0.260 0.181 0.641 0.370 0.047 0.031 0.039 0068771-E 7/10 ...

Page 8

... STD30NF06 TO-252 (DPAK) MECHANICAL DATA DIM. MIN. A 2.2 A1 0.9 A2 0.03 B 0.64 B2 5.2 C 0. 6.4 G 4 0.6 L2 8/10 mm TYP. MAX. 2.4 1.1 0.23 0.9 5.4 0.6 0.6 6.2 6.6 4.6 10.1 0 DETAIL "A" inch MIN. TYP. MAX. 0.086 0.094 0.035 ...

Page 9

... STD30NF06 9/10 ...

Page 10

... STD30NF06 Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice ...

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