PESD12VU1UT,215 NXP Semiconductors, PESD12VU1UT,215 Datasheet - Page 4

• Manufacturer Part Number: PESD12VU1UT,215
• Description: DIODE ESD PROTECTION SOT23
• Manufacturer: NXP Semiconductors

Specifications of PESD12VU1UT,215

• Voltage - Reverse Standoff (typ): 12V
• Voltage - Breakdown: 14.2V
• Power (watts): 200W
• Polarization: Unidirectional
• Mounting Type: Surface Mount
• Package / Case: SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
• Polarity: Unidirectional
• Clamping Voltage: 23 V
• Operating Voltage: 12 V
• Breakdown Voltage: 15 V
• Termination Style: SMD/SMT
• Peak Surge Current: 5 A
• Peak Pulse Power Dissipation: 200 W
• Capacitance: 0.6 pF
• Maximum Operating Temperature: + 150 C
• Minimum Operating Temperature: - 65 C
• Dimensions: 2.5 mm W x 3 mm L x 1.1 mm H
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 568-4026-2; 934059104215; PESD12VU1UT T/R; PESD12VU1UT T/R

NXP Semiconductors
PESDXU1UT_SER_2
Product data sheet
Fig 1.
(%)
I
PP
120
80
40
0
0
8/20 s pulse waveform according to
IEC 61000-4-5
10
100 % I
Table 6.
[1]
[2]
Table 7.
Symbol
V
Standard
IEC 61000-4-2; level 4 (ESD)
HBM MIL-STD-883; class 3
e
ESD
PP
t
Device stressed with ten non-repetitive ESD pulses.
Measured from pin 1 to 2
; 8 s
20
50 % I
Parameter
electrostatic discharge voltage
ESD maximum ratings
ESD standards compliance
PESD3V3U1UT
PESD5V0U1UT
PESD12VU1UT
PESD15VU1UT
PESD24VU1UT
PESDxU1UT
PP
30
; 20 s
001aaa630
t ( s)
Rev. 02 — 20 August 2009
Ultra low capacitance ESD protection diode in SOT23 package
40
Fig 2.
100 %
10 %
90 %
Conditions
IEC 61000-4-2
(contact discharge)
HBM MIL-STD-883
ESD pulse waveform according to
IEC 61000-4-2
I
PP
Conditions
> 15 kV (air); > 8 kV (contact)
> 4 kV
PESDxU1UT series
t
r
30 ns
0.7 ns to 1 ns
60 ns
[1][2]
Min
-
-
-
-
-
-
© NXP B.V. 2009. All rights reserved.
Max
30
30
30
30
23
10
001aaa631
t
Unit
kV
kV
kV
kV
kV
kV
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