PESD5V0V4UF,115 NXP Semiconductors, PESD5V0V4UF,115 Datasheet
PESD5V0V4UF,115
Specifications of PESD5V0V4UF,115
934061202115
PESD5V0V4UF T/R
PESD5V0V4UF T/R
PESD5V0V4UF,115
Related parts for PESD5V0V4UF,115
PESD5V0V4UF,115 Summary of contents
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PESDxV4UF; PESDxV4UG; PESDxV4UW Very low capacitance unidirectional quadruple ESD protection diode arrays Rev. 03 — 28 January 2008 1. Product profile 1.1 General description Very low capacitance unidirectional quadruple ElectroStatic Discharge (ESD) protection diode arrays in small Surface-Mounted Device (SMD) ...
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... NXP Semiconductors 1.4 Quick reference data Table unless otherwise specified. amb Symbol Per diode V RWM Pinning information Table 3. Pin PESD3V3V4UF; PESD5V0V4UF PESD3V3V4UG; PESD5V0V4UG PESD3V3V4UW; PESD5V0V4UW PESDXV4UF_G_W_3 Product data sheet Very low capacitance quadruple ESD protection diode arrays Quick reference data ...
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... NXP Semiconductors 3. Ordering information Table 4. Type number PESD3V3V4UF PESD5V0V4UF PESD3V3V4UG PESD5V0V4UG PESD3V3V4UW - PESD5V0V4UW 4. Marking Table 5. Type number PESD3V3V4UF PESD5V0V4UF PESD3V3V4UG PESD5V0V4UG PESD3V3V4UW PESD5V0V4UW [ made in Hong Kong * = p: made in Hong Kong * = t: made in Malaysia * = W: made in China 5. Limiting values Table 6. In accordance with the Absolute Maximum Rating System (IEC 60134). ...
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... NXP Semiconductors Table unless otherwise specified. amb Symbol Per diode V ESD [1] Device stressed with ten non-repetitive ESD pulses. [2] For PESDxV4UF measured from pin pin [3] For PESDxV4UG and PESDxV4UW measured from pin pin 2. Table 8. Standard Per diode IEC 61000-4-2; level 4 (ESD) MIL-STD-883 ...
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... NXP Semiconductors 6. Characteristics Table unless otherwise specified. amb Symbol Parameter Per diode V RWM PESDXV4UF_G_W_3 Product data sheet Very low capacitance quadruple ESD protection diode arrays Characteristics Conditions reverse standoff voltage PESD3V3V4UF PESD3V3V4UG PESD3V3V4UW PESD5V0V4UF PESD5V0V4UG PESD5V0V4UW reverse leakage current PESD3V3V4UF ...
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... NXP Semiconductors Table unless otherwise specified. amb Symbol Parameter dif [1] Non-repetitive current pulse 8/20 s exponential decay waveform according to IEC 61000-4-5. [2] For PESDxV4UF measured from pin pin [3] For PESDxV4UG and PESDxV4UW measured from pin pin ( amb Fig 3. Peak pulse power as a function of exponential pulse duration ...
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... NXP Semiconductors (pF ( MHz amb (1) PESD3V3V4UF; PESD3V3V4UG; PESD3V3V4UW (2) PESD5V0V4UF; PESD5V0V4UG; PESD5V0V4UW Fig 5. Diode capacitance as a function of reverse voltage; typical values Fig 7. V-I characteristics for a unidirectional ESD protection diode PESDXV4UF_G_W_3 Product data sheet Very low capacitance quadruple ESD protection diode arrays 006aaa262 ...
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... NXP Semiconductors ESD TESTER IEC 61000-4-2 network C = 150 pF 330 Z Z GND unclamped +1 kV ESD voltage waveform (IEC 61000-4-2 network) GND unclamped 1 kV ESD voltage waveform (IEC 61000-4-2 network) Fig 8. ESD clamping test setup and waveforms PESDXV4UF_G_W_3 Product data sheet Very low capacitance quadruple ESD protection diode arrays ...
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... NXP Semiconductors 7. Application information The devices are designed for the protection four unidirectional data or signal lines from the damage caused by ESD and surge pulses. The devices may be used on lines where the signal polarities are both, positive and negative with respect to ground. The devices provide a surge capability per line for an 8/20 s waveform each ...
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... NXP Semiconductors 8. Package outline 1.05 0.95 0.6 0. 0.17 0.5 1 1.4 0 0.40 0.35 0.32 0.27 Dimensions in mm Fig 10. Package outline PESDxV4UF (SOT886) Fig 12. Package outline PESDxV4UW (SOT665) PESDXV4UF_G_W_3 Product data sheet Very low capacitance quadruple ESD protection diode arrays 0.50 max 0.04 max 2 ...
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... NXP Semiconductors 9. Packing information Table 10. Packing methods The indicated -xxx are the last three digits of the 12NC ordering code. Type number Package Description PESD3V3V4UF SOT886 4 mm pitch tape and reel pitch tape and reel; T4 PESD5V0V4UF SOT886 4 mm pitch tape and reel pitch tape and reel ...
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... NXP Semiconductors Fig 14. Reflow soldering footprint PESDxV4UG (SOT353/SC-88A) Fig 15. Wave soldering footprint PESDxV4UG (SOT353/SC-88A) PESDXV4UF_G_W_3 Product data sheet Very low capacitance quadruple ESD protection diode arrays 2.35 0. 0.50 solder lands (4 ) solder paste solder resist occupied area Dimensions in mm 2.25 4.50 2 ...
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... NXP Semiconductors Fig 16. Reflow soldering footprint PESDxV4UW (SOT665) PESDXV4UF_G_W_3 Product data sheet Very low capacitance quadruple ESD protection diode arrays 0.70 0. 2.00 1.70 1.00 solder lands 0.075 solder resist Reflow soldering is the only recommended soldering method. Rev. 03 — 28 January 2008 PESDxV4UF/G/W 2 ...
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... PESDXV4UF_G_W_3 20080128 • Modifications: The format of this data sheet has been redesigned to comply with the new identity guidelines of NXP Semiconductors. • Legal texts have been adapted to the new company name where appropriate. • Type numbers PESD3V3V4UF and PESD5V0V4UF added • ...
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... Right to make changes — NXP Semiconductors reserves the right to make changes to information published in this document, including without limitation specifications and product descriptions, at any time and without notice ...
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... NXP Semiconductors 14. Contents 1 Product profi 1.1 General description 1.2 Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 1.3 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 1.4 Quick reference data Pinning information . . . . . . . . . . . . . . . . . . . . . . 2 3 Ordering information . . . . . . . . . . . . . . . . . . . . . 3 4 Marking . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 5 Limiting values Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . 5 7 Application information Package outline . . . . . . . . . . . . . . . . . . . . . . . . 10 9 Packing information Soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 11 Revision history . . . . . . . . . . . . . . . . . . . . . . . . 14 12 Legal information ...