PESD5V0L2UM,315 NXP Semiconductors, PESD5V0L2UM,315 Datasheet

DIODE ESD PROTECT LOW SOT-883

PESD5V0L2UM,315

Manufacturer Part Number
PESD5V0L2UM,315
Description
DIODE ESD PROTECT LOW SOT-883
Manufacturer
NXP Semiconductors
Datasheet

Specifications of PESD5V0L2UM,315

Package / Case
SC-101, SOT-883
Voltage - Reverse Standoff (typ)
5V
Voltage - Breakdown
6.46V
Power (watts)
30W
Polarization
Bidirectional
Mounting Type
Surface Mount
Polarity
Bidirectional
Clamping Voltage
13 V
Operating Voltage
5 V
Breakdown Voltage
6.8 V
Termination Style
SMD/SMT
Peak Surge Current
2.5 A
Peak Pulse Power Dissipation
250 mW
Capacitance
16 pF
Maximum Operating Temperature
+ 150 C
Minimum Operating Temperature
- 65 C
Dimensions
0.62 mm W x 1.02 mm L x 0.5 mm H
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Other names
568-4798-2
PESD5V0L2UM T/R
PESD5V0L2UM T/R
PESD5V0L2UM,315
Product data sheet
Supersedes data of 2003 Aug 05
DATA SHEET
PESDxL2UM series
Low capacitance double ESD
protection diode
BOTTOM VIEW
DISCRETE SEMICONDUCTORS
M3D883
2005 May 23

Related parts for PESD5V0L2UM,315

PESD5V0L2UM,315 Summary of contents

Page 1

DATA SHEET BOTTOM VIEW PESDxL2UM series Low capacitance double ESD protection diode Product data sheet Supersedes data of 2003 Aug 05 DISCRETE SEMICONDUCTORS M3D883 2005 May 23 ...

Page 2

... NXP Semiconductors Low capacitance double ESD protection diode FEATURES • Uni-directional ESD protection of two lines or bi-directional ESD protection of one line • Reverse standoff voltage 3.3 and 5 V • Low diode capacitance • Ultra low leakage current • Leadless ultra small SOT883 surface mount package (1 × ...

Page 3

... NXP Semiconductors Low capacitance double ESD protection diode LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 60134). SYMBOL PARAMETER Per diode I peak pulse current pp PESD3V3L2UM PESD5V0L2UM P peak pulse power pp I non-repetitive peak forward current FSM I non-repetitive peak reverse current ...

Page 4

... NXP Semiconductors Low capacitance double ESD protection diode ELECTRICAL CHARACTERISTICS = 25 °C unless otherwise specified SYMBOL PARAMETER Per diode V forward voltage F V reverse stand-off voltage RWM PESD3V3L2UM PESD5V0L2UM I reverse leakage current RM PESD3V3L2UM PESD5V0L2UM V clamping voltage (CL)R PESD3V3L2UM PESD5V0L2UM V breakdown voltage BR PESD3V3L2UM PESD5V0L2UM ...

Page 5

... NXP Semiconductors Low capacitance double ESD protection diode 10 handbook, halfpage I ZSM (A) 1 PESD5V0L2UM −1 10 −2 − Fig.2 Non-repetitive peak reverse current as a function of pulse time (square pulse handbook, halfpage P ZSM (W) PESD3V3L2UM 10 PESD5V0L2UM 1 −2 − ZSM ZSM ZSM V is the non-repetitive peak reverse voltage at I ZSM Fig ...

Page 6

... NXP Semiconductors Low capacitance double ESD protection diode handbook, full pagewidth ESD TESTER Note 1: IEC 61000-4-2 network 150 pF 330 Ω GND unclamped +1 kV ESD voltage waveform (IEC 61000-4-2 network) GND unclamped −1 kV ESD voltage waveform (IEC 61000-4-2 network) 2005 May 23 RG 223/U 50 Ω ...

Page 7

... NXP Semiconductors Low capacitance double ESD protection diode PACKAGE OUTLINE Leadless ultra small plastic package; 3 solder lands; body 1.0 x 0 DIMENSIONS (mm are the original dimensions) A (1) 1 UNIT max. 0.50 0.20 0.55 mm 0.03 0.46 0.12 0.47 Note 1. Including plating thickness OUTLINE ...

Page 8

... NXP Semiconductors. In case of any inconsistency or conflict between information in this document and such terms and conditions, the latter will prevail. ...

Page 9

... NXP Semiconductors Customer notification This data sheet was changed to reflect the new company name NXP Semiconductors. No changes were made to the content, except for the legal definitions and disclaimers. Contact information For additional information please visit: http://www.nxp.com For sales offices addresses send e-mail to: salesaddresses@nxp.com © ...

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