PESD5V0S1BB,115 NXP Semiconductors, PESD5V0S1BB,115 Datasheet
PESD5V0S1BB,115
Specifications of PESD5V0S1BB,115
934058005115
PESD5V0S1BB T/R
PESD5V0S1BB T/R
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PESD5V0S1BB,115 Summary of contents
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PESD5V0S1BA; PESD5V0S1BB; PESD5V0S1BL Low capacitance bidirectional ESD protection diodes Rev. 04 — 20 August 2009 1. Product profile 1.1 General description Low capacitance ElectroStatic Discharge (ESD) protection diodes in ultra small SMD plastic packages designed to protect one signal line ...
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... NXP Semiconductors 2. Pinning information Table 3. Pin SOD323, SOD523 1 2 SOD882 Ordering information Table 4. Type number PESD5V0S1BA PESD5V0S1BB PESD5V0S1BL 4. Marking Table 5. Type number PESD5V0S1BA PESD5V0S1BB PESD5V0S1BL PESD5V0S1BA_BB_BL_4 Product data sheet Low capacitance bidirectional ESD protection diodes Pinning Description cathode 1 cathode 2 cathode 1 cathode 2 ...
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... NXP Semiconductors 5. Limiting values Table 6. In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Per diode amb T stg [1] Non-repetitive current pulse 8/20 s exponentially decaying waveform according to IEC61000-4-5; see Figure [2] Measured from pin 1 to pin 2. Table 7. Symbol Parameter ESD [1] Measured from pin 1 to pin 2. ...
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... NXP Semiconductors 120 100 % (%) Fig 1. 8/20 s pulse waveform according to IEC 61000-4-5 PESD5V0S1BA_BB_BL_4 Product data sheet Low capacitance bidirectional ESD protection diodes mle218 Fig 2. Rev. 04 — 20 August 2009 PESD5V0S1BA/BB/ 100 % 0 ElectroStatic Discharge (ESD) pulse waveform according to IEC 61000-4-2 © NXP B.V. 2009. All rights reserved. ...
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... NXP Semiconductors 6. Characteristics Table 9. Characteristics unless otherwise specified amb Symbol Parameter Per diode V reverse stand-off voltage RWM I reverse leakage current RM V clamping voltage (CL)R V breakdown voltage (BR) r differential resistance dif C diode capacitance d [1] Non-repetitive current pulse 8/20 s exponentially decaying waveform according to IEC61000-4-5; see [2] Measures from pin 1 to pin 2 ...
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... NXP Semiconductors ( amb Fig 3. Peak pulse power dissipation as a function of exponential time duration (pF MHz amb Fig 5. Diode capacitance as a function of reverse voltage; typical values PESD5V0S1BA_BB_BL_4 Product data sheet Low capacitance bidirectional ESD protection diodes 001aaa202 PP( Fig 4. ; typical values p 001aaa203 I RM RM(T j =85 C) ...
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... NXP Semiconductors ESD TESTER IEC 61000-4-2 network C = 150 pF 330 Z Z GND unclamped 1 kV ESD voltage waveform (IEC61000-4-2 network) GND unclamped 1 kV ESD voltage waveform (IEC61000-4-2 network) Fig 7. ESD clamping test setup and waveforms PESD5V0S1BA_BB_BL_4 Product data sheet Low capacitance bidirectional ESD protection diodes ...
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... NXP Semiconductors 7. Application information PESD5V0S1Bx series is designed for the protection of one bidirectional signal line from the damage caused by ElectroStatic Discharge (ESD) and surge pulses. The devices may be used on lines where the signal polarities are above and below ground. They provide a surge capability 130 W per line for a 8/20 s waveform. ...
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... NXP Semiconductors 8. Package outline Plastic surface-mounted package; 2 leads 1 (1) DIMENSIONS (mm are the original dimensions UNIT max 1.1 0.40 0.25 mm 0.05 0.8 0.25 0.10 Note 1. The marking bar indicates the cathode OUTLINE VERSION IEC SOD323 Fig 9. Package outline SOD323 (SC-76) PESD5V0S1BA_BB_BL_4 Product data sheet ...
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... NXP Semiconductors Plastic surface-mounted package; 2 leads (1) OUTLINE VERSION IEC SOD523 Fig 10. Package outline SOD523 (SC-79) PESD5V0S1BA_BB_BL_4 Product data sheet Low capacitance bidirectional ESD protection diodes REFERENCES JEDEC JEITA SC-79 Rev. 04 — 20 August 2009 PESD5V0S1BA/BB/ scale DIMENSIONS (mm are the original dimensions) ...
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... NXP Semiconductors Leadless ultra small plastic package; 2 terminals; body 1.0 x 0 (2) DIMENSIONS (mm are the original dimensions) A (1) 1 UNIT max. 0.50 0.55 0.62 mm 0.03 0.46 0.47 0.55 Notes 1. Including plating thickness 2. The marking bar indicates the cathode OUTLINE VERSION IEC SOD882 Fig 11 ...
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... NXP Semiconductors 9. Packing information Table 10. Packing methods The indicated -xxx are the last three digits of the 12NC ordering code. Type number Package PESD5V0S1BA SOD323 PESD5V0S1BB SOD523 PESD5V0S1BL SOD882 [1] For further information and the availability of packing methods, see PESD5V0S1BA_BB_BL_4 Product data sheet ...
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... Product data sheet Low capacitance bidirectional ESD protection diodes Data sheet status Product data sheet This data sheet was changed to reflect the new company name NXP Semiconductors, including new legal definitions and disclaimers. No changes were made to the technical content. Table 3 “ ...
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... Right to make changes — NXP Semiconductors reserves the right to make changes to information published in this document, including without limitation specifications and product descriptions, at any time and without notice ...
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... NXP Semiconductors 13. Contents 1 Product profi 1.1 General description 1.2 Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 1.3 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 1.4 Quick reference data Pinning information . . . . . . . . . . . . . . . . . . . . . . 2 3 Ordering information . . . . . . . . . . . . . . . . . . . . . 2 4 Marking . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 5 Limiting values Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . 5 7 Application information Package outline . . . . . . . . . . . . . . . . . . . . . . . . . 9 9 Packing information Revision history . . . . . . . . . . . . . . . . . . . . . . . . 13 11 Legal information ...