PESD24VS2UQ,115 NXP Semiconductors, PESD24VS2UQ,115 Datasheet - Page 6

• Manufacturer Part Number: PESD24VS2UQ,115
• Description: DIODE ESD PROTECTION SOT663
• Manufacturer: NXP Semiconductors
• Series: -r

Specifications of PESD24VS2UQ,115

• Package / Case: SOT-663
• Voltage - Reverse Standoff (typ): 24V
• Voltage - Breakdown: 26.5V
• Power (watts): 150W
• Polarization: 2 Channel Array - Unidirectional
• Mounting Type: Surface Mount
• Polarity: Unidirectional
• Clamping Voltage: 36 V
• Operating Voltage: 24 V
• Breakdown Voltage: 27 V
• Termination Style: SMD/SMT
• Peak Surge Current: 3 A
• Peak Pulse Power Dissipation: 150 W
• Capacitance: 50 pF
• Maximum Operating Temperature: + 150 C
• Minimum Operating Temperature: - 65 C
• Dimensions: 1.7 mm W x 1.7 mm L x 0.6 mm H
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: 934057838115; PESD24VS2UQ T/R; PESD24VS2UQ T/R

NXP Semiconductors
Notes
1. Non-repetitive current pulse 8/20 s exponential decay waveform; see Fig.2.
2. Measured either across pins 1 and 3 or pins 2 and 3.
GRAPHICAL DATA
R
Double ESD protection diodes
in SOT663 package
diff
T
t
Fig.4
SYMBOL
p
P
(W)
amb
= 8/20 s exponential decaying waveform; see Fig.2.
pp
10
10
10
10
= 25 C.
4
3
2
1
Peak pulse power dissipation as a function
of pulse time; typical values.
differential resistance
PESD3V3S2UQ
PESD5V0S2UQ
PESD12VS2UQ
PESD15VS2UQ
PESD24VS2UQ
10
PARAMETER
10
2
t
p
001aaa726
( s)
10
Rev. 03 - 11 September 2008
3
I
I
I
I
I
R
R
R
R
R
= 5 mA
= 5 mA
= 5 mA
= 1 mA
= 0.5 mA
CONDITIONS
Fig.5
P
pp(25˚C)
P
pp
1.2
0.8
0.4
Relative variation of peak pulse power as a
function of junction temperature; typical
values.
0
0
MIN.
50
PESDxS2UQ series
TYP.
100
Product specification
40
15
15
225
300
MAX.
150
001aaa193
T
j
( C)
6 of 13
UNIT
200