PTVS28VS1UR,115 NXP Semiconductors, PTVS28VS1UR,115 Datasheet - Page 4

• Manufacturer Part Number: PTVS28VS1UR,115
• Description: TVS UNI-DIR 28V 400W SOD123W
• Manufacturer: NXP Semiconductors
• Series: -r

Specifications of PTVS28VS1UR,115

• Package / Case: SOD-123 Flat Leads
• Voltage - Reverse Standoff (typ): 28V
• Voltage - Breakdown: 31.1V
• Power (watts): 400W
• Polarization: Unidirectional
• Mounting Type: Surface Mount
• Polarity: Unidirectional
• Channels: 1 Channel
• Clamping Voltage: 45.4 V
• Operating Voltage: 28 V
• Breakdown Voltage: 32.8 V
• Peak Surge Current: 8.8 A
• Peak Pulse Power Dissipation: 400 W
• Maximum Operating Temperature: + 150 C
• Minimum Operating Temperature: - 55 C
• Dimensions: 1.9 mm W x 2.8 mm L x 1.1 mm H
• Mounting Style: SMD/SMT
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: 934061362115

NXP Semiconductors
6. Thermal characteristics
7. Characteristics
Table 9.
T
Table 10.
T
PTVSxS1UR_SER
Product data sheet
Type number
PTVS3V3S1UR
PTVS5V0S1UR
PTVS6V0S1UR
PTVS6V5S1UR
PTVS7V0S1UR
Type number
PTVS7V5S1UR
PTVS8V0S1UR
PTVS8V5S1UR
PTVS9V0S1UR
PTVS10VS1UR
PTVS11VS1UR
PTVS12VS1UR
PTVS13VS1UR
j
j
= 25
= 25
°
°
C unless otherwise specified.
C unless otherwise specified.
Characteristics per type; PTVS3V3S1UR to PTVS7V0S1UR
Characteristics per type; PTVS7V5S1UR to PTVS64VS1UR
Reverse standoff
voltage
V
Max
3.3
5.0
6.0
6.5
7.0
Reverse standoff
voltage
V
Max
7.5
8.0
8.5
9.0
10
11
12
13
RWM
RWM
Table 8.
[1]
[2]
[3]
[4]
Symbol
R
R
th(j-a)
th(j-sp)
(V)
(V)
Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard
footprint.
Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for cathode 1 cm
Device mounted on a ceramic PCB, Al
Soldering point of cathode tab.
Thermal characteristics
Parameter
thermal resistance from
junction to ambient
thermal resistance from
junction to solder point
All information provided in this document is subject to legal disclaimers.
Breakdown voltage
V
I
Min
5.20
6.40
6.67
7.22
7.78
Breakdown voltage
V
I
Min
8.33
8.89
9.44
10.00
11.10
12.20
13.30
14.40
R
R
BR
BR
= 10 mA
= 1 mA
(V)
(V)
Rev. 3 — 10 January 2011
Typ
5.60
6.70
7.02
7.60
8.20
Typ
8.77
9.36
9.92
10.55
11.70
12.85
14.00
15.15
2
Max
6.00
7.00
7.37
7.98
8.60
Max
9.21
9.83
10.40
11.10
12.30
13.50
14.70
15.90
O
3
, standard footprint.
Conditions
in free air
Reverse leakage
current
I
at V
Typ
5
5
5
5
3
Reverse leakage
current
I
at V
Typ
0.2
0.03
0.01
0.005
0.005
0.005
0.005
0.001
RM
RM
(μA)
(μA)
RWM
RWM
PTVSxS1UR series
400 W Transient Voltage Suppressor
(V)
(V)
Max
600
400
400
250
100
Max
50
25
10
5
2.5
2.5
2.5
0.1
[1]
[2]
[3]
[4]
Min
-
-
-
-
Clamping voltage
V
Max
8.0
9.2
10.3
11.2
12.0
Clamping voltage
V
Max
12.9
13.6
14.4
15.4
17.0
18.2
19.9
21.5
Typ
-
-
-
-
CL
CL
© NXP B.V. 2011. All rights reserved.
(V)
(V)
Max
220
130
70
18
I
43.8
43.5
38.8
35.7
33.3
I
31.0
29.4
27.8
26.0
23.5
22.0
20.1
18.6
PPM
PPM
2
Unit
K/W
K/W
K/W
K/W
.
(A)
(A)
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