MCF53010CQT240 Freescale Semiconductor, MCF53010CQT240 Datasheet - Page 21

• Manufacturer Part Number: MCF53010CQT240
• Description: MCU 32BIT COLDFIRE EMAC 208LQFP
• Manufacturer: Freescale Semiconductor
• Series: MCF5301xr

Specifications of MCF53010CQT240

• Core Processor: Coldfire V3
• Core Size: 32-Bit
• Speed: 240MHz
• Connectivity: EBI/EMI, Ethernet, I²C, MMC, SPI, SSI, UART/USART, USB OTG
• Peripherals: DMA, PWM, WDT
• Number Of I /o: 61
• Program Memory Size: 16KB (16K x 8)
• Program Memory Type: Cache
• Ram Size: 128K x 8
• Voltage - Supply (vcc/vdd): 1.08 V ~ 3.6 V
• Oscillator Type: Internal
• Operating Temperature: -40°C ~ 85°C
• Package / Case: 208-LQFP
• Processor Series: MCF5301x
• Core: ColdFire V3
• Data Bus Width: 32 bit
• Data Ram Size: 128 KB
• Interface Type: UART, I2C, SPI, SSI, Ethernet
• Maximum Clock Frequency: 20 MHz to 400 MHz
• Number Of Programmable I/os: 61
• Number Of Timers: 8
• Operating Supply Voltage: 3.6 V
• Maximum Operating Temperature: + 85 C
• Mounting Style: SMD/SMT
• 3rd Party Development Tools: JLINK-CF-BDM26, EWCF
• Development Tools By Supplier: M53015EVB, M53017KIT, M53017MOD
• Minimum Operating Temperature: - 40 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Eeprom Size: -
• Data Converters: -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant

where K is a constant pertaining to the particular part. K can be determined from
for a known T
for any value of T
5.3
5.4
Freescale Semiconductor
Core Supply Voltage
SRAM Standby Voltage
RTC Standby Voltage
PLL Supply Voltage
CMOS Pad Supply Voltage
SDRAM and FlexBus Supply Voltage
USB Supply Voltage
CMOS Input High Voltage
CMOS Input Low Voltage
CMOS Output High Voltage
CMOS Output Low Voltage
SDRAM and FlexBus Input High Voltage
SDRAM and FlexBus Input Low Voltage
Mobile DDR/Bus Pad Supply Voltage (nominal 1.8V)
DDR/Bus Pad Supply Voltage (nominal 2.5V)
SDR/Bus Pad Supply Voltage (nominal 3.3V)
I
I
Mobile DDR/Bus Input High Voltage (nominal 1.8V)
DDR/Bus Pad Supply Voltage (nominal 2.5V)
SDR/Bus Pad Supply Voltage (nominal 3.3V)
Mobile DDR/Bus Input High Voltage (nominal 1.8V)
DDR/Bus Pad Supply Voltage (nominal 2.5V)
SDR/Bus Pad Supply Voltage (nominal 3.3V)
OH
OL
= 2.0 mA
= –2.0 mA
ESD Protection
DC Electrical Specifications
A
. Using this value of K, the values of P
1
2
ESD Target for Human Body Model
A
All ESD testing is in conformity with JEDEC JESD22-A114 specification.
A device is defined as a failure if after exposure to ESD pulses the device no longer meets
the device specification requirements. Complete DC parametric and functional testing is
performed per applicable device specification at room temperature followed by hot
temperature, unless specified otherwise in the device specification.
.
Characteristic
Characteristics
Table 9. ESD Protection Characteristics
Preliminary—Subject to Change Without Notice
Table 10. DC Electrical Specifications
MCF5301x Data Sheet, Rev. 5
D
and T
J
can be obtained by solving
Symbol
HBM
SRAMV
RTCV
USBV
Symbol
PLLV
SDV
SDV
SDV
EV
EV
EV
IV
EV
EV
DD
DD
OH
OL
IH
STBY
IL
DD
DD
IH
IL
STBY
DD
Equation 3
Value
2000
1, 2
Preliminary Electrical Characteristics
SDV
0.51 × EV
0.8 × EV
Vref+0.15
V
V
Equation 1
SS
SS
1.08
1.08
1.70
2.25
–0.3
–0.3
Min
DD
3.0
3.0
3.0
3.0
3.0
—
by measuring P
2
– 0.3
– 0.3
× 0.7
DD
DD
Units
and
V
SDV
SDV
0.42 × EV
EV
SDV
SDV
0.2 × EV
Vref+0.15
Equation 2
DD
Max
1.32
1.32
1.95
2.75
DD
DD
3.6
3.6
3.6
3.6
3.6
0.8
DD
DD
—
D
+ 0.3
(at equilibrium)
+0.3
+0.3
+ 0.3
× 0.3
DD
DD
iteratively
Unit
V
V
V
V
V
V
V
V
V
V
V
V
V
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