C8051F369-GM Silicon Laboratories Inc, C8051F369-GM Datasheet - Page 69

IC 8051 MCU 16K FLASH 28-QFN

C8051F369-GM

Manufacturer Part Number
C8051F369-GM
Description
IC 8051 MCU 16K FLASH 28-QFN
Manufacturer
Silicon Laboratories Inc
Series
C8051F36xr
Datasheets

Specifications of C8051F369-GM

Program Memory Type
FLASH
Program Memory Size
16KB (16K x 8)
Package / Case
28-QFN
Core Processor
8051
Core Size
8-Bit
Speed
50MHz
Connectivity
SMBus (2-Wire/I²C), SPI, UART/USART
Peripherals
POR, PWM, Temp Sensor, WDT
Number Of I /o
25
Ram Size
1K x 8
Voltage - Supply (vcc/vdd)
2.7 V ~ 3.6 V
Data Converters
A/D 17x10b; D/A 1x10b
Oscillator Type
Internal
Operating Temperature
-40°C ~ 85°C
Processor Series
C8051F3x
Core
8051
Data Bus Width
8 bit
Data Ram Size
1 KB
Interface Type
I2C/SMBus/SPI/UART
Maximum Clock Frequency
50 MHz
Number Of Programmable I/os
25
Number Of Timers
4
Maximum Operating Temperature
+ 85 C
Mounting Style
SMD/SMT
3rd Party Development Tools
KSK-SL-TOOLSTICK, PK51, CA51, A51, ULINK2
Development Tools By Supplier
C8051F360DK
Minimum Operating Temperature
- 40 C
On-chip Adc
21-ch x 10-bit
On-chip Dac
1-ch x 10-bit
A/d Bit Size
10 bit
A/d Channels Available
21
Height
0.83 mm
Length
5 mm
Supply Voltage (max)
3.6 V
Supply Voltage (min)
2.7 V
Width
5 mm
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
For Use With
770-1006 - ISP 4PORT FOR SILABS C8051F MCU336-1410 - KIT DEV FOR C8051F360 FAMILY
Eeprom Size
-
Lead Free Status / Rohs Status
Lead free / RoHS Compliant
Other names
336-1651

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
C8051F369-GM
Manufacturer:
Silicon Labs
Quantity:
135
Table 7.1. Voltage Reference Electrical Characteristics
V
Output Voltage
VREF Short-Circuit Current
VREF Temperature
Coefficient
Load Regulation
VREF Turn-on Time 1
VREF Turn-on Time 2
Power Supply Rejection
Input Voltage Range
Input Current
ADC Bias Generator
Reference Bias Generator
DD
= 3.0 V; –40 to +85 °C unless otherwise specified.
Parameter
25 °C ambient
Load = 0 to 200 µA to AGND
4.7 µF tantalum, 0.1 µF ceramic
bypass
0.1 µF ceramic bypass
Sample Rate = 200 ksps; VREF =
3.0 V
BIASE = ‘1’ or AD0EN = ‘1’ or
IOSCEN = ‘1’
REFBE = ‘1’ or TEMPE = ‘1’ or
IDA0EN = ‘1’
External Reference (REFBE = 0)
Internal Reference (REFBE = 1)
Power Specifications
Conditions
C8051F360/1/2/3/4/5/6/7/8/9
Rev. 1.0
2.35
Min
0
2.42
Typ
200
100
7.5
1.4
25
30
3
3
Max
2.50
V
150
10
50
DD
ppm/°C
µV/µA
Units
mV/V
mA
ms
µA
µA
µA
µs
V
V
69

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