HD64F3437TFI16V Renesas Electronics America, HD64F3437TFI16V Datasheet - Page 558
HD64F3437TFI16V
Manufacturer Part Number
HD64F3437TFI16V
Description
MCU FLASH 60K 100-TQFP
Manufacturer
Renesas Electronics America
Datasheet
1.HD64F3437TFI16V.pdf
(755 pages)
Specifications of HD64F3437TFI16V
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
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Error Protection: In error protection, an error is detected when microcontroller runaway occurs
during flash memory programming/erasing, or operation is not performed in accordance with the
program/erase algorithm, and the program/erase operation is aborted. Aborting the program/erase
operation prevents damage to the flash memory due to overprogramming or overerasing.
If the microcontroller malfunctions during flash memory programming/erasing, the FLER bit is set
to 1 in FLMCR2 and the error protection state is entered. The FLMCR1, FLMCR2, and EBR2
settings are retained, but program mode or erase mode is aborted at the point at which the error
occurred. Program mode or erase mode cannot be re-entered by re-setting the P or E bit. However,
PV and EV bit setting is enabled, and a transition can be made to verify mode.
FLER bit setting conditions are as follows:
1. When flash memory is read during programming/erasing (including a vector read or instruction
2. Immediately after the start of exception handling (excluding a reset) during
3. When a SLEEP instruction (including software standby) is executed during
4. When the bus is released during programming/erasing
Error protection is released only by a power-on reset.
Figure 21.14 shows the flash memory state transition diagram.
526
fetch)
programming/erasing
programming/erasing
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