MC9S08AC96MFGE Freescale Semiconductor, MC9S08AC96MFGE Datasheet - Page 33

• Manufacturer Part Number: MC9S08AC96MFGE
• Description: MCU 8BIT 96K FLASH 44-LQFP
• Manufacturer: Freescale Semiconductor
• Series: HCS08r

Specifications of MC9S08AC96MFGE

• Core Processor: HCS08
• Core Size: 8-Bit
• Speed: 40MHz
• Connectivity: I²C, LIN, SCI, SPI
• Peripherals: LVD, POR, PWM, WDT
• Number Of I /o: 38
• Program Memory Size: 96KB (96K x 8)
• Program Memory Type: FLASH
• Ram Size: 6K x 8
• Voltage - Supply (vcc/vdd): 2.7 V ~ 5.5 V
• Data Converters: A/D 16x10b
• Oscillator Type: Internal
• Operating Temperature: -40°C ~ 125°C
• Package / Case: 44-LQFP
• Core: S08
• Processor Series: MC9S08ACXX
• Data Bus Width: 8 bit
• Maximum Clock Frequency: 40 MHz
• Data Ram Size: 6 KB
• On-chip Adc: Yes
• Number Of Timers: 3
• Operating Supply Voltage: 2.7 V to 5.5 V
• Operating Temperature Range: - 40 C to + 125 C
• Mounting Style: SMD/SMT
• A/d Bit Size: 10 bit
• A/d Channels Available: 8
• Height: 1.4 mm
• Interface Type: SCI, SPI, I2C
• Length: 10 mm
• Maximum Operating Temperature: + 125 C
• Minimum Operating Temperature: - 40 C
• Supply Voltage (max): 5.5 V
• Supply Voltage (min): 2.7 V
• Width: 10 mm
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Eeprom Size: -
• Lead Free Status / Rohs Status: Details

3.12
This section provides details about program/erase times and program-erase endurance for the Flash memory.
Program and erase operations do not require any special power sources other than the normal V
information about program/erase operations, see
Freescale Semiconductor
1
2
3
4
5
Num
Typical values are based on characterization data at V
The frequency of this clock is controlled by a software setting.
These values are hardware state machine controlled. User code does not need to count cycles. This information
supplied for calculating approximate time to program and erase.
Typical endurance for Flash was evaluated for this product family on the 9S12Dx64. For additional information on
how Freescale Semiconductor defines typical endurance, please refer to Engineering Bulletin EB619/D, Typical
Endurance for Nonvolatile Memory.
Typical data retention values are based on intrinsic capability of the technology measured at high temperature and
de-rated to 25°C using the Arrhenius equation. For additional information on how Freescale Semiconductor defines
typical data retention, please refer to Engineering Bulletin EB618/D, Typical Data Retention for Nonvolatile Memory.
10
1
2
4
6
8
3
5
7
9
FLASH Specifications
C
P
P
P
P
C
P
C
C
P
P
Supply voltage for program/erase
Supply voltage for read operation
Internal FCLK frequency
Internal FCLK period (1/FCLK)
Byte program time (random location)
Byte program time (burst mode)
Page erase time
Mass erase time
Program/erase endurance
Data retention
T
T = 25°C
L
to T
H
= –40°C to + 125°C
Characteristic
5
3
(2)
MC9S08AC128 MCU Series Data Sheet, Rev. 2
Table 3-15. Flash Characteristics
2
4
Chapter 4,
(2)
(2)
“Memory.”
DD
V
= 5.0 V, 25°C unless otherwise stated.
Symbol
prog/erase
V
f
t
t
t
t
t
t
Chapter 3 Electrical Characteristics and Timing Specifications
FCLK
Burst
Page
Mass
D_ret
Fcyc
prog
Read
10,000
Min
150
2.7
2.7
15
—
5
20,000
4000
100,000
Typ
9
4
100
—
DD
1
supply. For more detailed
Max
6.67
200
5.5
5.5
—
—
—
cycles
years
Unit
t
t
t
t
kHz
Fcyc
Fcyc
Fcyc
Fcyc
μs
V
V
33