R4F24268NVRFQV Renesas Electronics America, R4F24268NVRFQV Datasheet - Page 1278

• Manufacturer Part Number: R4F24268NVRFQV
• Description: MCU 256KB FLASH 48K 144-LQFP
• Manufacturer: Renesas Electronics America
• Series: H8® H8S/2400r

Specifications of R4F24268NVRFQV

• Core Processor: H8S/2600
• Core Size: 16/32-Bit
• Speed: 33MHz
• Connectivity: EBI/EMI, I²C, IrDA, SCI, SSU, UART/USART
• Peripherals: DMA, POR, PWM, WDT
• Number Of I /o: 96
• Program Memory Size: 256KB (256K x 8)
• Program Memory Type: FLASH
• Ram Size: 48K x 8
• Voltage - Supply (vcc/vdd): 3 V ~ 3.6 V
• Data Converters: A/D 10x10b, D/A 2x8b
• Oscillator Type: External
• Operating Temperature: -20°C ~ 75°C
• Package / Case: 144-LQFP
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Eeprom Size: -

Section 25 Electrical Characteristics
25.2.6
Table 25.25 Flash Memory Characteristics
Conditions: V
Notes:
Page 1248 of 1372
Item
Programming and erase
count*
Programming time
(per 4 bytes)
Erase time (per 1 block)
Programming and erase
voltage
Read voltage
Access state
1
1. In the system where multiple programming are executed, erase once so as to effectively diminish
2. If an erase error is occurred, execute the clear status command -> erase command for at least 3
*1. Determination of the number of times the programming/erase operation.
*2. Number of times that ensures all the electrical characteristics.
Flash Memory Characteristics
When the number of times the programming/erase is n times (n = 100), data can be erased n times
For example, if 4 bytes programming is done 1024 times, each at a different address in a 4-kbyte
However, programming cannot be done multiple times in the block (overwriting is prohibited).
the programming times after having written with leaving the blank area as least as possible by
shifting writing address one by one.
For example, if 16 bytes per 1 set is being programmed, erase once after maximum 256 sets of
programming has been done, which diminish the effective programming times.
Keep the information of the times of erasure and set up the limitation times is recommended.
times until no erase error is occurred.
Number of times the programming/erase performed in each block.
in each block.
per block, and then the block is erased, number of times the programming/erase can be one time.
φ = 8 MHz to 33 MHz
CC
= 3.0 V to 3.6 V, AV
Symbol
Test
conditions Applicable area
CC
= 3.0 V to 3.6 V, V
User ROM
Data flash area
User ROM
Data flash area
User ROM
Data flash area
User ROM
Data flash area
User ROM
Data flash area
User ROM
Data flash area
ref
= 3.0 V to AV
3.0
3.0
1
2
Standard value
Min.
1000*
10000*
⎯
⎯
⎯
⎯
H8S/2426, H8S/2426R, H8S/2424 Group
2
2
⎯
⎯
⎯
⎯
Typ.
⎯
⎯
150
300
300
300
REJ09B0466-0350 Rev. 3.50
CC
, V
SS
⎯
⎯
⎯
⎯
⎯
⎯
3.6
3.6
⎯
⎯
Max.
= AV
SS
Jul 09, 2010
= 0 V,
Unit
Times
μs
ms
V
V
State