DF2378RVFQ34V Renesas Electronics America, DF2378RVFQ34V Datasheet - Page 971

IC H8S MCU FLASH 512K 144LQFP

DF2378RVFQ34V

Manufacturer Part Number
DF2378RVFQ34V
Description
IC H8S MCU FLASH 512K 144LQFP
Manufacturer
Renesas Electronics America
Series
H8® H8S/2300r
Datasheets

Specifications of DF2378RVFQ34V

Core Processor
H8S/2000
Core Size
16-Bit
Speed
34MHz
Connectivity
I²C, IrDA, SCI, SmartCard
Peripherals
DMA, POR, PWM, WDT
Number Of I /o
97
Program Memory Size
512KB (512K x 8)
Program Memory Type
FLASH
Ram Size
32K x 8
Voltage - Supply (vcc/vdd)
3 V ~ 3.6 V
Data Converters
A/D 16x10b; D/A 6x8b
Oscillator Type
Internal
Operating Temperature
-20°C ~ 75°C
Package / Case
144-LQFP
For Use With
YLCDRSK2378 - KIT DEV EVAL H8S/2378 LCDYR0K42378FC000BA - KIT EVAL FOR H8S/2378HS0005KCU11H - EMULATOR E10A-USB H8S(X),SH2(A)EDK2378 - DEV EVAL KIT FOR H8S/2378
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Eeprom Size
-

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
DF2378RVFQ34V
Manufacturer:
Renesas Electronics America
Quantity:
10 000
16. Determine the FPFR (general-purpose register R0L) value returned by the programming
17. After programming finishes, clear FKEY and specify software protection.
⎯ Only perform programming finished processing once per block. Even if multiple 128-byte
⎯ Programming finished processing should be performed on all blocks containing areas that
⎯ Programming finished processing should be performed immediately after programming of
program.
If this LSI is restarted by a power-on reset immediately after user MAT programming has
finished, secure a reset period (period of RES = 0) that is at least as long as normal 100 μs.
Programming finished area
programming operations have been performed to the same block, programming finished
processing should only be carried out once. (Due not perform programming finished
processing multiple times.) If it is necessary to reprogram blocks within a previously
programmed area on which programming finished processing has been performed, first
erase the blocks in question and then reprogram them.
have been programmed after initialization processing. For example, if programming
finished processing is to be carried out once after programming blocks EB1 to EB3,
programming finished processing should be performed individually on EB1, EB2, and
EB3.
the necessary data has completed. Caution is necessary because if an operation such as
initialization processing, internal program downloading, rewriting an area of RAM that is a
download destination, or MAT switching is performed before programming finished
processing, programming will not take place correctly.
:
:
EB9
EB10
EB11
EB12
Before reprogramming erased blocks containing a programming
finished area (EB10 and EB11), the corresponding erased
blocks (EB10 and EB11) should be erased.
Section 21 Flash Memory (0.18-μm F-ZTAT Version)
Rev.7.00 Mar. 18, 2009 page 903 of 1136
REJ09B0109-0700

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