MC68HC908AS60CFN Freescale Semiconductor, MC68HC908AS60CFN Datasheet - Page 104

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MC68HC908AS60CFN

Manufacturer Part Number
MC68HC908AS60CFN
Description
IC MCU 60K FLASH 8MHZ 52-PLCC
Manufacturer
Freescale Semiconductor
Series
HC08r
Datasheet

Specifications of MC68HC908AS60CFN

Core Processor
HC08
Core Size
8-Bit
Speed
8.4MHz
Connectivity
SCI, SPI
Peripherals
LVD, POR, PWM
Number Of I /o
40
Program Memory Size
60KB (60K x 8)
Program Memory Type
FLASH
Eeprom Size
1K x 8
Ram Size
2K x 8
Voltage - Supply (vcc/vdd)
4.5 V ~ 5.5 V
Data Converters
A/D 15x8b
Oscillator Type
Internal
Operating Temperature
-40°C ~ 85°C
Package / Case
52-PLCC
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant

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EEPROM-2
7.4.2 EEPROM Erasing
Technical Data
The unprogrammed state is a logic 1. Only the valid EEPROM bytes in
the non-protected blocks and EENVR2 can be erased. When the array
is configured in the redundant mode, erasing the first 256 bytes also will
erase the last 256 bytes.
Using this step-by-step procedure erases EEPROM:
EEBPx bit must be cleared to erase EEPROM data in the corresponding
block. If any EEBPx is set, the corresponding block cannot be erased
and bulk erase mode does not apply.
Notes:
1. Clear/set EERAS1 and EERAS0 to select byte/block/bulk erase,
2. Write any data to the desired address for byte erase, to any
3. Set the EEPGM bit. (See note b.)
4. Wait for a time, t
5. Clear EEPGM bit.
6. Wait for a time, t
7. Clear EELAT bits. (See note c.)
8. Repeat steps 1 to 7 for more EEPROM byte/block erasing.
Freescale Semiconductor, Inc.
a. Setting the EELAT bit configures the address and data buses to
For More Information On This Product,
and set EELAT in EECR2. (See note a.)
address in the desired block for block erase, or to any array
address for bulk erase.
latch data for erasing the array. Only valid EEPROM addresses
with their data will be latched. If another consecutive valid
EEPROM write occurs, this address and data will override the
previous address and data. In block erase mode, any EEPROM
address in the block may be used in step 2. All locations within
this block will be erased. In bulk erase mode, any EEPROM
address may be used to erase the whole EEPROM. EENVR2 is
not affected with block or bulk erase. Any attempts to read other
EEPROM data will read the latched data. If EELAT is set, other
writes to the EECR2 will be allowed after a valid EEPROM write.
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EEPROM-2
EEPGM
EEFPV
, for the erasing voltage to fall.
/t
EEBLOCK
/t
EEBULK
MC68HC908AS60 — Rev. 1.0
.

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