MCR908JK1CDWE Freescale Semiconductor, MCR908JK1CDWE Datasheet - Page 43

• Manufacturer Part Number: MCR908JK1CDWE
• Description: IC MCU 1.5K FLASH 20-SOIC
• Manufacturer: Freescale Semiconductor
• Series: HC08r

Specifications of MCR908JK1CDWE

• Core Processor: HC08
• Core Size: 8-Bit
• Speed: 8MHz
• Peripherals: LED, LVD, POR, PWM
• Number Of I /o: 14
• Program Memory Size: 1.5KB (1.5K x 8)
• Program Memory Type: FLASH
• Ram Size: 128 x 8
• Voltage - Supply (vcc/vdd): 2.7 V ~ 3.3 V
• Data Converters: A/D 12x8b
• Oscillator Type: External
• Operating Temperature: -40°C ~ 85°C
• Package / Case: 20-SOIC (7.5mm Width)
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Eeprom Size: -
• Connectivity: -

4.7 FLASH Program Operation
MC68H(R)C908JL3
Freescale Semiconductor
NOTE:
—
Rev. 1.1
Programming of the FLASH memory is done on a row basis. A row
consists of 32 consecutive bytes starting from addresses $XX00,
$XX20, $XX40, $XX60, $XX80, $XXA0, $XXC0 or $XXE0. Use this
step-by-step procedure to program a row of FLASH memory:
(Figure 4-2
In order to avoid program disturbs, the row must be erased before any
byte on that row is programmed.
This program sequence is repeated throughout the memory until all data
is programmed.
10. Wait for time, t
11. Clear the HVEN bit.
12. After time, t
1. Set the PGM bit. This configures the memory for program
2. Write any data to any FLASH location within the address range of
3. Wait for a time, t
4. Set the HVEN bit.
5. Wait for a time, t
6. Write data to the byte being programmed.
7. Wait for time, t
8. Repeat step 6 and 7 until all the bytes within the row are
9. Clear the PGM bit.
operation and enables the latching of address and data for
programming.
the row to be programmed.
programmed.
again.
shows a flowchart of the programming algorithm.)
FLASH Memory (FLASH)
rcv
PROG
nvh
(1µs), the memory can be accessed in read mode
nvs
pgs
(5µs).
(10µs).
(5µs).
(30µs).
FLASH Memory (FLASH)
Technical Data
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