MCR908JK3MDWE Freescale Semiconductor, MCR908JK3MDWE Datasheet - Page 42

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MCR908JK3MDWE

Manufacturer Part Number
MCR908JK3MDWE
Description
IC MCU 4K FLASH 20-SOIC
Manufacturer
Freescale Semiconductor
Series
HC08r
Datasheet

Specifications of MCR908JK3MDWE

Core Processor
HC08
Core Size
8-Bit
Speed
8MHz
Peripherals
LED, LVD, POR, PWM
Number Of I /o
15
Program Memory Size
4KB (4K x 8)
Program Memory Type
FLASH
Ram Size
128 x 8
Voltage - Supply (vcc/vdd)
4.5 V ~ 5.5 V
Data Converters
A/D 12x8b
Oscillator Type
External
Operating Temperature
-40°C ~ 125°C
Package / Case
20-SOIC (7.5mm Width)
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Eeprom Size
-
Connectivity
-
FLASH Memory (FLASH)
4.6 FLASH Mass Erase Operation
Technical Data
42
NOTE:
NOTE:
Programming and erasing of FLASH locations cannot be performed by
code being executed from the FLASH memory. While these operations
must be performed in the order as shown, but other unrelated operations
may occur between the steps.
Use the following procedure to erase the entire FLASH memory:
Programming and erasing of FLASH locations cannot be performed by
code being executed from the FLASH memory. While these operations
must be performed in the order as shown, but other unrelated operations
may occur between the steps.
5. Wait for a time t
6. Clear the ERASE bit.
7. Wait for a time, t
8. Clear the HVEN bit.
9. After time, t
1. Set both the ERASE bit and the MASS bit in the FLASH Control
2. Write any data to any FLASH location within the FLASH memory
3. Wait for a time, t
4. Set the HVEN bit.
5. Wait for a time t
6. Clear the ERASE bit.
7. Wait for a time, t
8. Clear the HVEN bit.
9. After time, t
again.
Register.
address range.
again.
FLASH Memory (FLASH)
rcv
rcv
(1µs)
(1µs)
ERASE
ERASE
nvh
nvs
nvh1
,
,
(10µs).
(5µs).
the memory can be accessed in read mode
the memory can be accessed in read mode
(100µs).
(1ms).
(4ms).
MC68H(R)C908JL3
Freescale Semiconductor
Rev. 1.1

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