TL082BIYDT STMicroelectronics, TL082BIYDT Datasheet - Page 5

no-image

TL082BIYDT

Manufacturer Part Number
TL082BIYDT
Description
IC OP AMP DUAL JFET GP 8-SOIC
Manufacturer
STMicroelectronics
Datasheet

Specifications of TL082BIYDT

Amplifier Type
J-FET
Number Of Circuits
2
Slew Rate
16 V/µs
Gain Bandwidth Product
4MHz
Current - Input Bias
20pA
Voltage - Input Offset
1000µV
Current - Supply
1.4mA
Current - Output / Channel
40mA
Voltage - Supply, Single/dual (±)
6 V ~ 36 V, ±3 V ~ 18 V
Operating Temperature
-40°C ~ 105°C
Mounting Type
Surface Mount
Package / Case
8-SOIC (3.9mm Width)
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Output Type
-
-3db Bandwidth
-
Other names
497-10230-2

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
TL082BIYDT
Manufacturer:
ST
0
Part Number:
TL082BIYDT
Manufacturer:
STM
Quantity:
5 873
TL082 TL082A TL082B
Table 3.
1. The input bias currents are junction leakage currents which approximately double for every 10° C increase in the junction
Symbol
V
GBP
THD
o1
temperature.
∅m
K
e
R
t
/V
ov
r
n
i
o2
Rise time
Overshoot
Gain bandwidth product
Input resistance
Total harmonic distortion
Equivalent input noise voltage
Phase margin
Channel separation
V
V
V
F=1kHz, R
R
A
V
v
in
in
in
S
CC
= 100
= 20mV, R
= 20mV, R
= 10mV, R
= 100Ω, F = 1kHz
= ±15V, T
L
= 2kΩ ,C
L
L
L
= 2kΩ , C
= 2kΩ , C
= 2kΩ , C
amb
Parameter
L
= +25°C (unless otherwise specified) (continued)
=100pF, A
L
L
L
= 100pF, unity gain
= 100pF, unity gain
= 100pF, F= 100kHz
v
=20dB, V
o
=2V
pp
Min.
TL082I,AC,AI,BC,
2.5
Typ. Max. Min.
10
0.01
120
0.1
10
15
45
BI
4
12
Electrical characteristics
2.5
TL082C
Typ. Max.
10
0.01
120
0.1
10
15
45
4
12
degrees
MHz
Unit
----------- -
dB
µs
nV
%
%
Ω
Hz
5/17

Related parts for TL082BIYDT