DA108S1RL STMicroelectronics, DA108S1RL Datasheet

DIODE ARRAY LOW CAP 8DIO 8-SOIC

DA108S1RL

Manufacturer Part Number
DA108S1RL
Description
DIODE ARRAY LOW CAP 8DIO 8-SOIC
Manufacturer
STMicroelectronics
Datasheet

Specifications of DA108S1RL

Voltage - Reverse Standoff (typ)
15V
Power (watts)
730mW
Polarization
4 Channel Array - Bidirectional
Mounting Type
Surface Mount
Package / Case
8-SOIC (3.9mm Width)
Applications
Overload Protection
Number Of Circuits
8
Voltage - Working
15V
Technology
Diode Array
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Voltage - Clamping
-
Other names
497-3399-2

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Features
Complies with following standards:
Applications
Description
Array of 8 or 12 diodes configured by cells of 2
diodes, each cell being used to protect signal line
from transient overvoltages by clamping action.
As maximum voltage of each diode is 18 V,
maximum input voltage range between two I/Os is
either 0 V to 18 V (REF1 = 0 V and REF2 =
+18 V) or -9 V to +9 V (REF1 = -9 V and REF2 =
+9 V)
January 2008
Array of 8 or 12 diodes
Low input capacitance
Suitable for digital line protection
IEC 61000-4-2 Level 4
– 15kV (air discharge)
– 8kV (contact discharge)
Protection of logic side of ISDN S-interface
Protection of I/O lines of microcontroller
Signal conditioning
Rev 6
Figure 1.
Figure 2.
I/O2
I/O3
I/O4
I/O1 1
I/O2
I/O3
I/O4
I/O1
2
3
4
Functional diagram: DA108S1
Functional diagram: DA112S1
SO-8
DA108S1
DA112S1
Diode array
8
7
6
5
REF1
I/O6
REF2
I/O5
REF1
REF2
REF3
REF4
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DA108S1RL Summary of contents

Page 1

Features ■ Array diodes ■ Low input capacitance ■ Suitable for digital line protection Complies with following standards: ■ IEC 61000-4-2 Level 4 – 15kV (air discharge) – 8kV (contact discharge) Applications ■ Protection of logic ...

Page 2

Characteristics 1 Characteristics Table 1. Absolute maximum ratings (T Symbol V Repetitive peak reverse voltage (for one single diode) RRM I Repetitive peak forward current PP P Power dissipation T Storage temperature range stg T Operating junction temperature range j ...

Page 3

DA108S1 / DA112S1 Figure 3. Input capacitance V connected between REF1 and REF2 CC Input applied : DC bias + 950 mV REF2 I/O G REF1 Figure 4. Typical peak forward voltage characteristics (8/20 µs pulse) V (V) F 2.0 ...

Page 4

Characteristics Figure 5. Application 1: ISDN interface protection, residual lightning surges at transformer secondary are suppressed by DA108S1 Figure 6. Application 2: microcontroller I/O port protection Note: IMPORTANT : DA108S1 must be connected to the reference voltages through REF1 and ...

Page 5

DA108S1 / DA112S1 2 Ordering information scheme Figure 7. Ordering information scheme Diode Array Version Number of diodes Serial Package 1 = SO-8 Packaging RL = Tape and reel Blank = Tube Ordering information ...

Page 6

Package mechanical data 3 Package mechanical data ● Epoxy meets UL94 order to meet environmental requirements, ST offers these devices in ECOPACK packages. These packages have a lead-free second level interconnect. The category of second level interconnect is ...

Page 7

... DA108S1 / DA112S1 4 Ordering information Figure 9. Ordering information Order codes DA108S1 DA108S1RL DA112S1 DA112S1RL 1. Prefered packaging is tape and reel 5 Revision history Figure 10. Revision history Date Aug-2001 15-Feb-2007 15-Jan-2008 Marking Package DA108S SO-8 DA112S Revision 4 Previous release. Reformatted to current standard. 5 Standard typing error corrected. ...

Page 8

... Information in this document is provided solely in connection with ST products. STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, modifications or improvements, to this document, and the products and services described herein at any time, without notice. All ST products are sold pursuant to ST’s terms and conditions of sale. ...

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