SI2325DS-T1-GE3 Vishay, SI2325DS-T1-GE3 Datasheet - Page 3

• Manufacturer Part Number: SI2325DS-T1-GE3
• Description: MOSFET P-CH D-S 150V SOT-23
• Manufacturer: Vishay
• Series: TrenchFET®r

Specifications of SI2325DS-T1-GE3

• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 1.2 Ohm @ 500mA, 10V
• Drain To Source Voltage (vdss): 150V
• Current - Continuous Drain (id) @ 25° C: 530mA
• Vgs(th) (max) @ Id: 4.5V @ 250µA
• Gate Charge (qg) @ Vgs: 12nC @ 10V
• Input Capacitance (ciss) @ Vds: 510pF @ 25V
• Power - Max: 750mW
• Mounting Type: Surface Mount
• Package / Case: SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
• Transistor Polarity: P Channel
• Continuous Drain Current Id: -690mA
• Drain Source Voltage Vds: -150V
• On Resistance Rds(on): 1.3ohm
• Rds(on) Test Voltage Vgs: -6V
• Threshold Voltage Vgs Typ: -4.5V
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: SI2325DS-T1-GE3TR

TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
Document Number: 73238
S09-0133-Rev. B, 02-Feb-09
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0.0
2.00
1.75
1.50
1.25
1.00
0.75
0.50
0.25
0.00
10
8
6
4
2
0
0
0.0
0
0.2
V
I
D
On-Resistance vs. Drain Current
1
DS
= 0.5 A
2
V
= 75 V
V
DS
0.4
GS
Output Characteristics
2
Q
- Drain-to-Source Voltage (V)
= 10 thru 5 V
g
I
D
- Total Gate Charge (nC)
0.6
V
Gate Charge
- Drain Current (A)
4
GS
3
= 6 V
0.8
4
6
1.0
5
4 V
V
GS
1.2
6
8
= 10 V
3 V
1.4
7
10
1.6
8
500
400
300
200
100
2.5
2.0
1.5
1.0
0.5
0.0
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0.0
0
- 50
0
0
C
rss
On-Resistance vs. Junction Temperature
C
- 25
oss
V
I
D
GS
= 0.5 A
30
= 10 V
1
V
V
Transfer Characteristics
GS
DS
0
T
J
- Junction Temperature (°C)
- Gate-to-Source Voltage (V)
- Drain-to-Source Voltage (V)
25
Capacitance
60
2
C
50
iss
Vishay Siliconix
T
90
C
3
75
= 125 °C
25 °C
Si2325DS
100
www.vishay.com
120
4
125
- 55 °C
150
150
5
3