SI2325DS-T1-GE3 Vishay, SI2325DS-T1-GE3 Datasheet - Page 5

• Manufacturer Part Number: SI2325DS-T1-GE3
• Description: MOSFET P-CH D-S 150V SOT-23
• Manufacturer: Vishay
• Series: TrenchFET®r

Specifications of SI2325DS-T1-GE3

• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 1.2 Ohm @ 500mA, 10V
• Drain To Source Voltage (vdss): 150V
• Current - Continuous Drain (id) @ 25° C: 530mA
• Vgs(th) (max) @ Id: 4.5V @ 250µA
• Gate Charge (qg) @ Vgs: 12nC @ 10V
• Input Capacitance (ciss) @ Vds: 510pF @ 25V
• Power - Max: 750mW
• Mounting Type: Surface Mount
• Package / Case: SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
• Transistor Polarity: P Channel
• Continuous Drain Current Id: -690mA
• Drain Source Voltage Vds: -150V
• On Resistance Rds(on): 1.3ohm
• Rds(on) Test Voltage Vgs: -6V
• Threshold Voltage Vgs Typ: -4.5V
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: SI2325DS-T1-GE3TR

TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?73238.
Document Number: 73238
S09-0133-Rev. B, 02-Feb-09
0.01
0.1
2
1
10
-4
0.05
0.02
0.1
Duty Cycle = 0.5
0.2
Single Pulse
10
-3
Normalized Thermal Transient Impedance, Junction-to-Ambient
10
-2
Square Wave Pulse Duration (s)
10
-1
1
1. Duty Cycle, D =
2. Per Unit Base = R
3. T
4. Surface Mounted
Notes:
10
P
DM
JM
- T
A
t
1
= P
t
2
DM
Vishay Siliconix
Z
thJA
thJA
(t)
t
t
100
1
2
Si2325DS
= 120 °C/W
www.vishay.com
600
5