SI2325DS-T1-GE3 Vishay, SI2325DS-T1-GE3 Datasheet - Page 4

• Manufacturer Part Number: SI2325DS-T1-GE3
• Description: MOSFET P-CH D-S 150V SOT-23
• Manufacturer: Vishay
• Series: TrenchFET®r

Specifications of SI2325DS-T1-GE3

• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 1.2 Ohm @ 500mA, 10V
• Drain To Source Voltage (vdss): 150V
• Current - Continuous Drain (id) @ 25° C: 530mA
• Vgs(th) (max) @ Id: 4.5V @ 250µA
• Gate Charge (qg) @ Vgs: 12nC @ 10V
• Input Capacitance (ciss) @ Vds: 510pF @ 25V
• Power - Max: 750mW
• Mounting Type: Surface Mount
• Package / Case: SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
• Transistor Polarity: P Channel
• Continuous Drain Current Id: -690mA
• Drain Source Voltage Vds: -150V
• On Resistance Rds(on): 1.3ohm
• Rds(on) Test Voltage Vgs: -6V
• Threshold Voltage Vgs Typ: -4.5V
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: SI2325DS-T1-GE3TR

Si2325DS
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
www.vishay.com
4
- 0.2
- 0.5
0.1
1.3
1.0
0.7
0.4
0.1
3
1
- 50
0
- 25
0.2
Source-Drain Diode Forward Voltage
V
SD
0
0.4
T
- Source-to-Drain Voltage (V)
J
Threshold Voltage
T
= 150 °C
I
J
D
25
- Temperature (°C)
= 250 µA
0.6
50
0.8
T
J
75
= 25 °C
0.001
1.0
0.01
100
0.1
10
1
0.1
Limited by R
1.2
* V
125
GS
Single Pulse
T
> minimum V
A
150
1.4
= 25 °C
V
Limited
1
DS
I
DS(on) *
D(on)
Safe Operating Area
- Drain-to-Source Voltage (V)
GS
BVDSS Limited
at which R
10
I
DM
Limited
DS(on)
3.0
2.5
2.0
1.5
1.0
0.5
0.0
12
10
8
6
4
2
0
0.01
100
0
is specified
On-Resistance vs. Gate-to-Source Voltage
1 ms
10 ms
100 ms
10 s, 1 s
100 s, DC
10 µs
100 µs
0.1
2
1000
V
GS
- Gate-to-Source Voltage (V)
Single Pulse Power
4
1
Time (s)
S09-0133-Rev. B, 02-Feb-09
I
D
= 0.5 A
Document Number: 73238
6
10
T
A
= 25 °C
8
100
600
10