STP28NM50N STMicroelectronics, STP28NM50N Datasheet - Page 12

• Manufacturer Part Number: STP28NM50N
• Description: MOSFET N-CH 500V 21A TO-220
• Manufacturer: STMicroelectronics
• Series: MDmesh™r

Specifications of STP28NM50N

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 158 mOhm @ 10.5A, 10V
• Drain To Source Voltage (vdss): 500V
• Current - Continuous Drain (id) @ 25° C: 21A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 50nC @ 10V
• Input Capacitance (ciss) @ Vds: 1735pF @ 25V
• Power - Max: 90W
• Mounting Type: Through Hole
• Package / Case: TO-220-3
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.158 Ohms
• Forward Transconductance Gfs (max / Min): 1.5 V
• Drain-source Breakdown Voltage: 500 V
• Continuous Drain Current: 21 A
• Power Dissipation: 90 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: Through Hole
• Gate Charge Qg: 50 nC
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 497-10712-5

Package mechanical data
12/18
Table 9.
Figure 23. TO-220FP drawing
Dim.
Dia
G1
F1
F2
L2
L3
L4
L5
L6
L7
D
G
H
A
B
E
F
TO-220FP mechanical data
A
B
H
Min.
0.45
0.75
1.15
1.15
4.95
28.6
15.9
4.4
2.5
2.5
2.4
9.8
2.9
10
9
3
STB28NM50N, STF28NM50N, STP28NM50N, STW28NM50N
Dia
Doc ID 17432 Rev 1
L6
L2
L7
L3
Typ.
L5
mm
16
F1
D
L4
F2
F
E
G1
Max.
2.75
1.70
1.70
10.4
30.6
10.6
16.4
4.6
2.7
0.7
5.2
2.7
3.6
9.3
3.2
1
7012510_Rev_K
G