MC9S08AC32CPUE Freescale Semiconductor, MC9S08AC32CPUE Datasheet - Page 53

• Manufacturer Part Number: MC9S08AC32CPUE
• Description: IC MCU 8BIT 32K FLASH 64-LQFP
• Manufacturer: Freescale Semiconductor
• Series: HCS08r

Specifications of MC9S08AC32CPUE

• Core Processor: HCS08
• Core Size: 8-Bit
• Speed: 40MHz
• Connectivity: I²C, SCI, SPI
• Peripherals: LVD, POR, PWM, WDT
• Number Of I /o: 54
• Program Memory Size: 32KB (32K x 8)
• Program Memory Type: FLASH
• Ram Size: 2K x 8
• Voltage - Supply (vcc/vdd): 2.7 V ~ 5.5 V
• Data Converters: A/D 16x10b
• Oscillator Type: Internal
• Operating Temperature: -40°C ~ 85°C
• Package / Case: 64-LQFP
• Processor Series: S08AC
• Core: HCS08
• Data Bus Width: 8 bit
• Data Ram Size: 2 KB
• Interface Type: I2C, SCI, SPI
• Maximum Clock Frequency: 20 MHz
• Number Of Programmable I/os: 54
• Number Of Timers: 3
• Maximum Operating Temperature: + 85 C
• Mounting Style: SMD/SMT
• 3rd Party Development Tools: EWS08
• Development Tools By Supplier: DEMO9S08AC60E, DEMOACEX, DEMOACKIT, DCF51AC256, DC9S08AC128, DC9S08AC16, DC9S08AC60, DEMO51AC256KIT
• Minimum Operating Temperature: - 40 C
• On-chip Adc: 10 bit, 16 Channel
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Eeprom Size: -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant

Chapter 4 Memory
FCBEF to launch the command.
Figure 4-2
is a flowchart for executing all of the commands except for
burst programming. The FCDIV register must be initialized before using any FLASH commands. This
must be done only once following a reset.
START
0
FACCERR ?
CLEAR ERROR
(1)
(1)
Only required once
WRITE TO FCDIV
after reset.
WRITE TO FLASH
TO BUFFER ADDRESS AND DATA
WRITE COMMAND TO FCMD
WRITE 1 TO FCBEF
(2)
Wait at least four bus cycles before
TO LAUNCH COMMAND
checking FCBEF or FCCF.
(2)
AND CLEAR FCBEF
YES
FPVIO OR
ERROR EXIT
FACCERR ?
NO
0
FCCF ?
1
DONE
Figure 4-2. FLASH Program and Erase Flowchart
4.4.4
Burst Program Execution
The burst program command is used to program sequential bytes of data in less time than would be
required using the standard program command. This is possible because the high voltage to the FLASH
array does not need to be disabled between program operations. Ordinarily, when a program or erase
command is issued, an internal charge pump associated with the FLASH memory must be enabled to
supply high voltage to the array. Upon completion of the command, the charge pump is turned off. When
a burst program command is issued, the charge pump is enabled and then remains enabled after completion
of the burst program operation if the following two conditions are met:
1. The next burst program command has been queued before the current program operation has
completed.
MC9S08AC60 Series Data Sheet, Rev. 2
Freescale Semiconductor
53