BGA2800,115 NXP Semiconductors, BGA2800,115 Datasheet - Page 8

IC AMP MMIC WIDEBAND SOT363

BGA2800,115

Manufacturer Part Number
BGA2800,115
Description
IC AMP MMIC WIDEBAND SOT363
Manufacturer
NXP Semiconductors
Type
MMIC Wideband Amplifierr
Datasheet

Specifications of BGA2800,115

Noise Figure
3.7dB
Package / Case
SC-70-6, SC-88, SOT-363
Current - Supply
55mA
Voltage - Supply
3 V ~ 3.6 V
Frequency
0Hz ~ 2.2GHz
Rf Type
General Purpose
Gain
20.2dB
P1db
-2dBm
Test Frequency
2.15GHz
Bandwidth
3.2 GHz
Operating Supply Voltage
3.3 V
Supply Current
10.5 mA
Maximum Power Dissipation
200 mW
Mounting Style
SMD/SMT
Number Of Channels
6
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
NXP Semiconductors
BGA2800
Product data sheet
Fig 8. Output return loss as function of frequency;
RL
(dB)
(1) V
(2) V
(3) V
(4) V
(5) V
out
−10
−20
−30
0
typical values
0
P
drive
CC
CC
CC
CC
CC
= 3.0 V; T
= 3.0 V; T
= 3.3 V; T
= 3.6 V; T
= 3.6 V; T
= −40 dBm; Z
amb
amb
amb
amb
amb
1
= 85 °C; I
= −40 °C; I
= 25 °C; I
= 85 °C; I
= −40 °C; I
0
= 50 Ω.
CC
CC
CC
CC
CC
2
= 8.80 mA
= 10.52 mA
= 11.62 mA
= 9.18 mA
= 12.07 mA
(1)
(2)
(3)
(4)
(5)
f (GHz)
All information provided in this document is subject to legal disclaimers.
001aam237
Rev. 2 — 18 October 2010
3
Fig 9. Insertion power gain as function of frequency;
(dB)
G
(1) V
(2) V
(3) V
(4) V
(5) V
p
25
23
21
19
17
15
typical values
0
P
drive
CC
CC
CC
CC
CC
= 3.0 V; T
= 3.0 V; T
= 3.3 V; T
= 3.6 V; T
= 3.6 V; T
= −40 dBm; Z
amb
amb
amb
amb
amb
1
= 85 °C; I
= −40 °C; I
= 25 °C; I
= 85 °C; I
= −40 °C; I
0
= 50 Ω.
MMIC wideband amplifier
(1)
(2)
(3)
(4)
(5)
CC
CC
CC
CC
CC
2
= 8.80 mA
= 10.52 mA
= 11.62 mA
= 9.18 mA
= 12.07 mA
BGA2800
© NXP B.V. 2010. All rights reserved.
f (GHz)
001aam238
3
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