MW7IC2725NBR1 Freescale Semiconductor, MW7IC2725NBR1 Datasheet - Page 23

IC PWR AMP RF 2700MHZ TO-272-16

MW7IC2725NBR1

Manufacturer Part Number
MW7IC2725NBR1
Description
IC PWR AMP RF 2700MHZ TO-272-16
Manufacturer
Freescale Semiconductor
Datasheet

Specifications of MW7IC2725NBR1

Current - Supply
275mA
Frequency
2.7GHz
Gain
28.5dB
P1db
25W
Package / Case
TO-272-16
Rf Type
WiMax
Test Frequency
2.7GHz
Voltage - Supply
32V
Drain Source Voltage (max)
65V
Output Power (max)
4W
Power Gain (typ)@vds
28.5dB
Frequency (min)
2.3GHz
Frequency (max)
2.7GHz
Package Type
TO-272 WB EP
Pin Count
16
Output Capacitance (typ)@vds
111@28VpF
Operating Temp Range
-65C to 225C
Drain Efficiency (typ)
17%
Mounting
Surface Mount
Mode Of Operation
OFDM/WIMAX
Vswr (max)
5
Screening Level
Military
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Noise Figure
-
Lead Free Status / Rohs Status
Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
MW7IC2725NBR1
Manufacturer:
FREESCALE
Quantity:
20 000
Company:
Part Number:
MW7IC2725NBR1
Quantity:
512
RF Device Data
Freescale Semiconductor
Application Notes
• AN1907: Solder Reflow Attach Method for High Power RF Devices in Plastic Packages
• AN1955: Thermal Measurement Methodology of RF Power Amplifiers
• AN1977: Quiescent Current Thermal Tracking Circuit in the RF Integrated Circuit Family
• AN1987: Quiescent Current Control for the RF Integrated Circuit Device Family
• AN3263: Bolt Down Mounting Method for High Power RF Transistors and RFICs in Over-Molded Plastic Packages
• AN3789: Clamping of High Power RF Transistors and RFICs in Over-Molded Plastic Packages
Engineering Bulletins
• EB212: Using Data Sheet Impedances for RF LDMOS Devices
Software
• Electromigration MTTF Calculator
• RF High Power Model
For Software and Tools, do a Part Number search at http://www.freescale.com, and select the “Part Number” link. Go to the
Software & Tools tab on the part's Product Summary page to download the respective tool.
Revision
Refer to the following documents to aid your design process.
The following table summarizes revisions to this document.
0
1
2
3
June 2008
Oct. 2008
Jan. 2010
July 2008
Date
• Initial Release of Data Sheet
• Added MW7IC2725NBR1 device and corresponding case outline information to data sheet.
• Added Fig. 13, MTTF versus Junction Temperature, p. 9
• Modified VSWR rating to show the 3 dB overdrive capability, p. 1
• Maximum Ratings table: Added Case Operating Temperature and set limit to 150°C. Corrected maximum
• Added AN3789, Clamping of High Power RF Transistors and RFICs in Over-Molded Plastic Packages to
PRODUCT DOCUMENTATION, TOOLS AND SOFTWARE
input power level to the tested value from 20 dBm to 22 dBm, p. 2
Product Documentation, Application Notes, p. 23
REVISION HISTORY
MW7IC2725NR1 MW7IC2725GNR1 MW7IC2725NBR1
Description
23

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